InAs nanowire with 〈110〉 orientation is proposed for use as an electron spin transport channel for application to spintronics devices, particularly the Datta–Das spin transistor. Stable zinc blende crystal NWs were grown using a molecular beam epitaxy system. Subsequently, global back-gate NW field effect transistors were fabricated, and the superiority of the electrical transport properties within our resultant 〈110〉 NWs was demonstrated by comparing the field-effect mobility with a 〈111〉 NW control sample. Additionally, single NW Hall-bar devices were fabricated, which allowed us to obtain the transport properties accurately, and Hall effect measurements were successfully taken at different temperatures.
The characterization of InAs is known to have high spin–orbit interaction as well as high electron velocity, high sheet carrier density. In order to realize Datta–Das type spin field effect transistor (FET), it becomes crucial to develop thermally stable Schottky gate metal process for achieving a non-alloyed ohmic contact with ferromagnetic electrode after gate formation process. We have investigated Pd-gate deposited on In0.81Ga0.19As-based pseudomorphic heterostructures structure in order to check Pd as a good candidate for thermally stable Schottky gate by verifying good Schottky characteristics while maintaining good transport properties during heat treatment. Characteristics of Pd gate on InAlAs barrier layer was found to have Schottky barrier height of around 0.68 and less than 1.10 of ideality factor. Moreover Pd gate was found to endure higher heat treatment than Ti/Pt/Au gate or Ti/Au gate.
We have investigated electrical spin injection from Ni 81 Fe 19 into an InAs quantum well through MgO tunneling barrier for potential application to InAs-based spin field effect transistor. Injected spin polarized current were detected in both nonlocal and local spin valve set-ups and the spin diffusion length and spin injection efficiency were analyzed. The spin diffusion length was estimated to be 1.6 μm in nonlocal set-up at 1.4 K. The spin polarization of Ni 81 Fe 19 /MgO/InAs as-deposited sample was relealed to be 6.9 %, while increased spin polarization of 8.9 % was observed by additional thermal treatment.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.