Gate‐Voltage Control of Optically‐ Induced Charges and Memory Effects in Polymer Field‐Effect Transistors

Optoelectronic Switch and Memory Devices Based on Polymer‐Functionalized Carbon Nanotube Transistors

“…4b), fast relaxation step and no metastable state at V GS < 0 (Fig. 4c), and reset of the memory with a pulse at V GS < 0 (not shown but addressed by Dutta and Narayan [32] ). These similarities emphasize the fact that the OG-CNTFET characteristics are fully determined by the charge distribution and dynamics in the polymer film or at the polymer/dielectric interface.…”

Polarization fluctuation dominated electrical transport processes of polymer-based ferroelectric field effect transistors

“…The photocurrent, I ph (t) response for FE-FET with PVDF-TrFE as the dielectric was distinctively different from the response obtained with P3HT FET with polyvinyl alcohol (PVA, high k ~ 10) as the dielectric. 37 The rate of increase in I ph (t) upon photo-excitation in FE-FETs is slower since a fraction of the photo-generated charge carriers are utilized to compensate ε dep , and this contribution was clearly absent in the PE-phase above and is accompanied by a smaller contribution from P nl in the FE-regime.…”

Low-voltage driving phototransistor based on dye-sensitized nanocrystalline titanium dioxide thin films

“…This together with low field-effect drift mobility, usually results in too high power consumption and too low light sensitivity, to be practical for application. Further, unless the back-gated voltage is removed synchronously, OPTs have a too slow recombination rate to be operated in the dynamic optical communication [14][15][16][17] . Unlike the outside electric field in most OPTs mentioned above, a distinct charge separation mechanism induced by rapid electron injection and diffusion exists inside the Dye-sensitized Solar Cell (DSSC) [18][19][20] , implying the possibility to gain emerging OPTs with the tailorable performances.…”