Optoelectronic Switch and Memory Devices Based on Polymer‐Functionalized Carbon Nanotube Transistors

Borghetti, Julien; Derycke, Vincent; Lenfant, S.; Chenevier, Pascale; Filoramo, Arianna; Goffman, M. F.; Vuillaume, D.; Bourgoin, Jean‐Philippe

doi:10.1002/adma.200601138

Cited by 146 publications

(170 citation statements)

References 41 publications

(51 reference statements)

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“…Their unique mechanical, electronic, and transport properties have stimulated a great amount of fundamental and applied research with potential use in various technological devices [1]. In particular, the engineering of sidewall chemical functionalization of CNTs has opened true perspectives in the development of innovative systems such as chemical sensors [2], optically modulated conductors [3,4], or novel switching devices and molecular memories [5][6][7][8]. However, many difficulties remain to be overcome in order to benefit from the large diversity of organic chemistry reactions that can be performed on a tube wall together with the exceptional transport properties of pristine CNTs.…”

Section: Introductionmentioning

confidence: 99%

Quantum transport properties of chemically functionalized long semiconducting carbon nanotubes

2010

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We present a first-principles study of the electronic transport properties of micrometer long semiconducting carbon nanotubes randomly covered with carbene functional groups. Whereas prior studies suggested that metallic tubes are hardly affected by such addends, we show here that the conductance of semiconducting tubes with standard diameter is, on the contrary, severely damaged. The configurational-averaged conductance as a function of tube diameter, with a coverage of up to one hundred molecules, is extracted. Our results indicate that the search for a conductance-preserving covalent functionalization route remains a challenging issue.

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Section: Introductionmentioning

confidence: 99%

Quantum transport properties of chemically functionalized long semiconducting carbon nanotubes

2010

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“…Besides, a new design of synapse-like circuit requires a multi-level nonvolatile memory [4]. For this application, and according to its high charge sensitivity, Optically-Gated Carbon Nanotube Field Effect Transistor (OG-CNTFET) appears as a good candidate thanks to optical writing and electrical erasing abilities both with single and multiple drain current levels [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…Indeed, compact modeling (i.e. SPICE-like) is a key issue for predicting the ultimate performances of these novel nano-devices in a circuit environment using standard simulation tools.Electron trapping/releasing mechanism When a thin film of P3OT coats on a CNTFET, this polymer acts as a p-type doping under no illumination condition [5]. We suppose that the CNT channel is electrostatically doped due to negative charges trapped at the polymer/SiO 2 interface in the nanotube vicinity [1].…”

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confidence: 99%

“…1b describes this so-called optical gating effect. When the light is turned off, the trapped electrons are not released immediately; they are hold for about ten hours [5,7].The optical gating effect can be removed more rapidly by applying a negative gate voltage or a positive drain-source one [5-6, 9]. The negative gate bias provides an electrostatic field that contributes to release the trapped electrons at the P3OT/SiO 2 interface.…”

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confidence: 99%

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Compact modeling of optically gated carbon nanotube field effect transistor

Liao¹,

Maneux²,

Pouget³

et al. 2010

Physica Status Solidi (b)

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BackgroundCarbon Nanotube Field Effect Transistors (CNTFETs) have high charge sensitivity at room temperature [1]. By using this sensitivity, some nonvolatile memory devices have been demonstrated with charge trapping in SiO 2 gate insulator [2,3]. Besides, a new design of synapse-like circuit requires a multi-level nonvolatile memory [4]. For this application, and according to its high charge sensitivity, Optically-Gated Carbon Nanotube Field Effect Transistor (OG-CNTFET) appears as a good candidate thanks to optical writing and electrical erasing abilities both with single and multiple drain current levels [5,6].By coating a thin layer of photosensitive polymer such as poly3-octylthiophene-2,5-diyl (P3OT) over the nanotube, a CNTFET becomes an OG-CNTFET [5], as presented in Fig. 1a. Compared to the conventional CNTFET, the OG-CNTFET reveals a significant increase of the drain current below the threshold gate bias voltage. If this device is under significant powerful illumination, the gate bias will no longer control the conductivity of the CNT channel, and the optical gate will dominate the functionality. This property of variable conductance is of particular interest for neural network designs to define a third logic level. In this work, we present a compact model for OG-CNTFET. Indeed, compact modeling (i.e. SPICE-like) is a key issue for predicting the ultimate performances of these novel nano-devices in a circuit environment using standard simulation tools.Electron trapping/releasing mechanism When a thin film of P3OT coats on a CNTFET, this polymer acts as a p-type doping under no illumination condition [5]. We suppose that the CNT channel is electrostatically doped due to negative charges trapped at the polymer/SiO 2 interface in the nanotube vicinity [1].When an OG-CNTFET is under illumination with a wavelength that can be absorbed by the polymer, electron-hole pairs are generated in the P3OT layer, and a minor part of them can be separated [7]. This polymer is known for trapping only electrons [8]. If the gate is biased positively, these trapped electrons can be homogenously attracted by the electrostatic field to the P3OT/SiO 2 interface. The resulting charge density contributes to modulate the channel conductivity by screening the back gate bias. Fig. 1b describes this so-called optical gating effect. When the light is turned off, the trapped electrons are not released immediately; they are hold for about ten hours [5,7].The optical gating effect can be removed more rapidly by applying a negative gate voltage or a positive drain-source one [5-6, 9]. The negative gate bias provides an electrostatic field that contributes to release the trapped electrons at the P3OT/SiO 2 interface. Concerning the effect of the positive V ds , we assume that it creates an electric field close to the drain electrode that contributes to sweep away the trapped carriers according to the field magnitude distribution as a function of the distance to the drain electrode (c.f. Fig. 1c). Modeling of OG-CNTFETSince the OG-CNTFET...

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“…Moreover, the same principle works with semiconducting nanowires dressed with redox molecules in a transistor configuration [116][117][118]. Optoelectronic memories have also been demonstrated with polymer-functionalized CNT transistors [119,120]. However, in all cases, further investigations on the search of other molecules and, understanding the factors that control parameters such as, charge transfer rate, which limit write/read times, and charge retention times, which determines refresh rates, are needed.…”

Section: A Charge-based Memorymentioning

confidence: 99%

Molecular Nanoelectronics

Vuillaume

2010

Proc. IEEE

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Abstract-Molecular electronics is envisioned as a promising candidate for the nanoelectronics of the future. More than a possible answer to ultimate miniaturization problem in nanoelectronics, molecular electronics is foreseen as a possible way to assemble a large numbers of nanoscale objects (molecules, nanoparticules, nanotubes and nanowires) to form new devices and circuit architectures. It is also an interesting approach to significantly reduce the fabrication costs, as well as the energetical costs of computation, compared to usual semiconductor technologies. Moreover, molecular electronics is a field with a large spectrum of investigations: from quantum objects for testing new paradigms, to hybrid molecular-silicon CMOS devices. However, problems remain to be solved (e.g. a better control of the molecule-electrode interfaces, improvements of the reproducibility and reliability, etc…).

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Optoelectronic Switch and Memory Devices Based on Polymer‐Functionalized Carbon Nanotube Transistors

Cited by 146 publications

References 41 publications

Quantum transport properties of chemically functionalized long semiconducting carbon nanotubes

Quantum transport properties of chemically functionalized long semiconducting carbon nanotubes

Compact modeling of optically gated carbon nanotube field effect transistor

Molecular Nanoelectronics

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