Gate tunneling leakage current behavior of 40nm PD SOI NMOS device considering the floating body effect

Hung, Hao-Wei; Kuo, J.B.; Chen, D.; Yeh, C.-C.

doi:10.1016/j.microrel.2010.01.015

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“…Thereby, an accurate gate-tobody tunneling current model is necessary to well predict the GIFBE in device or circuit simulations. It is found that when a device is operating in inversion mode, the gate-to-body tunneling is dominated by electrons tunneling from Si valenceband, known as electron valence band (EVB) tunneling, [4][5][6][7] as seen in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Gate-to-body tunneling current model for silicon-on-insulator MOSFETs

Chen

Luo

et al. 2013

Chinese Phys. B

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A gate-to-body tunneling current model for silicon-on-insulator (SOI) devices is simulated. As verified by the measured data, the model, considering both gate voltage and drain voltage dependence as well as image force-induced barrier low effect, provides a better prediction of the tunneling current and gate-induced floating body effect than the BSIMSOI4 model. A delayed gate-induced floating body effect is also predicted by the model.

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Section: Introductionmentioning

confidence: 99%