Gate‐Tunable Ultrahigh Photoresponsivity of 2D Heterostructures Based on Few Layer MoS<sub>2</sub> and Solution‐Processed rGO

Yang, Juehan; Huo, Nengjie; Li, Yan; Jiang, Xiangwei; Tao, Li; Li, Renxiong; Lu, Fangyuan; Fan, Chao; Li, Bo; Nørgaard, Kasper; Laursen, Bo W.; Wei, Zhongming; Li, Jingbo; Li, Shu-Shen

doi:10.1002/aelm.201500267

Cited by 30 publications

(15 citation statements)

References 62 publications

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“…Because some TMDs have strong action with incident light, many high photoresponsivity photodetectors based on TMDs heterostructures have also been demonstrated. Based on the most widely studied MoS 2 material, many hybrid structures have been fabricated, for example, with reduced graphene oxide (rGO) film, graphene quantum dots and PbS quantum dots . Moreover, MoS 2 /Si, MoS 2 /GaAs, MoS 2 /b‐P,, MoS 2 /WSe 2 WSe 2 /SnS 2 , WSe 2 /GaSe, and G/MoTe 2 heterostructures with high responsivity have also been demonstrated.…”

Section: Photodetectors Based On 2d Materialsmentioning

confidence: 99%

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Long

Wang

Fang

et al. 2018

Adv Funct Materials

1,055

872

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2D material based photodetectors have attracted many research projects due to their unique structures and excellent electronic and optoelectronic properties. These 2D materials, including semimetallic graphene, semiconducting black phosphorus, transition metal dichalcogenides, insulating hexagonal boron nitride, and their various heterostructures, show a wide distribution in bandgap values. To date, hundreds of photodetectors based on 2D materials have been reported. Here, a review of photodetectors based on 2D materials covering the detection spectrum from ultraviolet to infrared is presented. First, a brief insight into the detection mechanisms of 2D material photodetectors as well as introducing the figure-of-merits which are key factors for a reasonable comparison between different photodetectors is provided. Then, the recent progress on 2D material based photodetectors is reviewed. Particularly, the excellent performances such as broadband spectrum detection, ultrahigh photoresponsivity and sensitivity, fast response speed and high bandwidth, polarization-sensitive detection are pointed out on the basis of the state-of-the-art 2D photodetectors. Initial applications based on 2D material photodetectors are mentioned. Finally, an outlook is delivered, the challenges and future directions are discussed, and general advice for designing and realizing novel high-performance photodetectors is given to provide a guideline for the future development of this fast-developing field.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201803807. atomic layer, while these atomically thin layers are bonded together by weak van der Waals interactions along the third dimension perpendicular to the 2D plane. The weak interlayer interaction makes it possible to exfoliate bulk crystals into isolated thin 2D flakes and even a single atomically thin layer.A photodetector is a device that can convert a light signal into an electrical signal. High performance photodetectors play important roles in many fields of our daily life, including electro-optical displays, imaging, environment monitoring, optical communication, military, security checking and so forth. 2D materials, as one of most competitive materials for designing photodetectors, have been demonstrated with remarkable characteristics, including broad detection waveband covering the wavelengths from UV to terahertz frequencies (THz, 10 12 Hz), ultrahigh photoresponsivity, polarization sensitive photodetection, high-speed photoresponse, high spatially resolved imaging, etc. Thanks to the recently developed dry transfer technique, [1] various heterostructures based on 2D materials have been designed and fabricated with desirable band alignments. Photodetectors based on these heterostructures have exhibited enhanced performances like high photovoltaic external quantum efficiency up to 30% for graphene-WS 2 -graphene, [2] ultrahigh photoresponsivity up to ≈10 10 A W −1 for graphene-MoS 2 , [3] ultrahigh photogain ...

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Section: Photodetectors Based On 2d Materialsmentioning

confidence: 99%

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Long

Wang

Fang

et al. 2018

Adv Funct Materials

1,055

872

View full text Add to dashboard Cite

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“…[ 9,13 ] Efficient separation of photogenerated electron–hole pairs in the channel area facilitated by a built‐in electric field represents a promising approach to realize highly efficient photoelectric conversion. [ 19–23 ] Excellent photovoltaic characteristic, good rectification behavior, and strong photocurrent response can be achieved. [ 21,24,25 ] Such built‐in field is induced by joining together two semiconductors of different type: a p‐type semiconductor containing an excess of holes and n‐type one with an excess of electrons.…”

Section: Introductionmentioning

confidence: 99%

“…[ 19–23 ] Excellent photovoltaic characteristic, good rectification behavior, and strong photocurrent response can be achieved. [ 21,24,25 ] Such built‐in field is induced by joining together two semiconductors of different type: a p‐type semiconductor containing an excess of holes and n‐type one with an excess of electrons. TMDs‐based phototransistors with p–n heterojunction configurations can be fabricated either by deterministic stacking of 2D layers or by chemical vapor deposition, and phototransistors with homojunction configurations can be realized via localized chemical doping, electrostatic tuning as well as lateral thickness engineering.…”

Section: Introductionmentioning

confidence: 99%

Out‐of‐Plane Homojunction Enabled High Performance SnS₂ Lateral Phototransistor

Gao

Yang

Mao

et al. 2020

Advanced Optical Materials

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intriguing building blocks for optoelectronics owing to their excellent mechanical flexibility, sizable bandgap, and strong light-matter interaction. [1][2][3][4][5][6] Among them, tin disulfide (SnS 2 ), has attracted wide research interest due to its low-cost, earthabundant, nontoxic, and environment friendly characteristics. [7][8][9][10][11][12][13][14][15][16] SnS 2 possesses a layered CdI 2 -type structure, with Sn atoms sandwiched by two layers of hexagonally packed S atoms. [17] It has fast photoresponse, excellent stability, and high optical absorption coefficient exceeding 10 4 cm −1 , making it promising for optoelectronic applications. [18] However, photodetectors based on SnS 2 still suffer from poor performance in sensitivity and low power spectrum detectivity due to weak photocurrent generated in the channel area. [9,13] Efficient separation of photogenerated electron-hole pairs in the channel area facilitated by a built-in electric field represents a promising approach to realize highly efficient photoelectric conversion. [19][20][21][22][23] Excellent photovoltaic characteristic, good rectification behavior, and strong photocurrent response can be achieved. [21,24,25] Such builtin field is induced by joining together two semiconductors of 2D materials have been extensively applied in electronic and optoelectronic devices due to their unique and extraordinary electrical and optical properties. Among them, tin disulfide (SnS 2 ) has attracted enormous research interests due to its low-cost, earth-abundant, environment friendly properties as well as superior performance in photodetectors. Here, an outstanding in-plane SnS 2 phototransistor with an out-of-plane built-in electric field enabled by molybdenum oxide (MoO 3 ) surface functionalization is demonstrated. The photocarriers are generated and effectively separated by the vertical electric field, leading to a high photoresponsivity of 2.3 × 10 3 A⋅W −1 , photoconductive gain of >10 5 , external quantum efficiency exceeding 8%. It also demonstrates a low noise power density, revealing an ultrasensitive photodetection with specific detectivity up to 3.2 × 10 12 Jones. The formation of the out-of-plane built-in electric field is validated by the output electrical transport measurement of SnS 2 vertical transistor, and further corroborated by in situ ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy characterizations. The findings promise surface functionalization as an effective approach to induce an internal electric field in 2D multilayer SnS 2 towards its application in high performance photodetection.

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“…Owing to a direct band gap located in the visible spectrum, mono‐layer MoS 2 has been demonstrated to be a suitable material for sensitive phototransistors . Due to a strong light‐matter interaction and n‐type properties , layered MoS 2 have been representative n‐type building blocks for the atomically thin van der Waals p–n heterostructures . For example, many heterostructures such as MoS 2 /WSe 2 , MoS 2 /black phosphorus have been investigated, and high photo‐responsivity devices were achieved .…”

Section: Introductionmentioning

confidence: 99%

“…Due to a strong light‐matter interaction and n‐type properties , layered MoS 2 have been representative n‐type building blocks for the atomically thin van der Waals p–n heterostructures . For example, many heterostructures such as MoS 2 /WSe 2 , MoS 2 /black phosphorus have been investigated, and high photo‐responsivity devices were achieved . However, non‐uniform photocurrent is usually generated at the overlapped region of the heterostructures .…”

Section: Introductionmentioning

confidence: 99%

Uniform photoresponse in thermally oxidized Ni and MoS₂ heterostructures

Luo

Peng

Wang

et al. 2017

Phys. Status Solidi A

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Non-uniform photocurrent is usually generated at the overlapped region of the heterostructures, and its potential applications may be hindered by the spatial uniformity issue of the device photoresponse. Here, nearly a uniform photoresponse at the overlapped region of the thermally oxidized Ni and molybdenum disulphide (MoS 2 ) heterostructures is obtained. Further characterizations reveal that several nanometers Ni is rightly under the NiO x layer formed at the surface of the film in the oxidation process. The heterostructures based on layered MoS 2 /NiO x /Ni with highly conductive bottom Ni show a high uniform photoresponse with an external quantum efficiency (EQE) of 1.4% at 532 nm. Moreover, successful integration of multiple devices suggests a great priority for such a structure for highly integrated uniform photodetectors.

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Gate‐Tunable Ultrahigh Photoresponsivity of 2D Heterostructures Based on Few Layer MoS₂ and Solution‐Processed rGO

Cited by 30 publications

References 62 publications

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Out‐of‐Plane Homojunction Enabled High Performance SnS₂ Lateral Phototransistor

Uniform photoresponse in thermally oxidized Ni and MoS₂ heterostructures

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Gate‐Tunable Ultrahigh Photoresponsivity of 2D Heterostructures Based on Few Layer MoS2 and Solution‐Processed rGO

Cited by 30 publications

References 62 publications

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Out‐of‐Plane Homojunction Enabled High Performance SnS2 Lateral Phototransistor

Uniform photoresponse in thermally oxidized Ni and MoS2 heterostructures

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Product

Resources

About

Gate‐Tunable Ultrahigh Photoresponsivity of 2D Heterostructures Based on Few Layer MoS₂ and Solution‐Processed rGO

Out‐of‐Plane Homojunction Enabled High Performance SnS₂ Lateral Phototransistor

Uniform photoresponse in thermally oxidized Ni and MoS₂ heterostructures