Gate Stacks

Engström, Olof; Mitrović, Ivona Z.; Hall, S.; Hurley, Paul K.; Cherkaoui, Karim; Monaghan, Scott; Gottlob, H. D. B.; Lemme, Max C.

doi:10.1002/9781118621523.ch2

Cited by 2 publications

(2 citation statements)

References 108 publications

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“…Extrinsic electron states occur in solid materials as a result of perturbations of the atomic arrangements due to the existence of defects and impurities. As MOS structures involve a metal/insulator junction and an insulator/semiconductor heterojunction, a multifarious appearance of this kind of states has an important technical impact when MOS structures are used as transistor gates [1,2]. Traps positioned in the bulk of the insulator and at the two interfaces may influence threshold voltages, channel mobilities and gate leakage.…”

Section: Introductionmentioning

confidence: 99%

Electron States in MOS Systems

Engström¹

2011

ECS Trans.

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The properties of charge carrier traps in the oxide bulk, at high-k/silicon transition regions, at the silicon interface and as dipoles are discussed from physical and electrical perspectives. In order to elucidate the charging properties of oxide traps the statistical mechanics for occupation is derived based on a constant pressure ensemble and used to interpret the influence of negative-U states. For the transition region close to the silicon interface, the existence of unstable traps in the shift of energy band between SiO2 and HfO2 with continuous modification is pointed out. The physical background for electrical measurements on interface states is examined and, finally, dipoles constituted by traps in high-k dielectrics for regulating threshold voltage of MOS transistors are considered.

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Section: Introductionmentioning

confidence: 99%

Electron States in MOS Systems

Engström¹

2011

ECS Trans.

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“…As MOS structures involve a metal-insulator junction and an insulatorsemiconductor heterojunction, a multifarious appearance of this kind of states as charge carrier traps has an important technical impact when MOS structures are used as transistor gates. 1 Traps positioned in the bulk of the insulator and at the two interfaces may influence threshold voltages, channel mobilities and gate leakage. Furthermore, they are more common and severe in high-k oxides than in traditional thermal SiO 2 .…”

mentioning

confidence: 99%

Electron States in MOS Systems

Engström¹

2011

Meet. Abstr.

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Gate Stacks

Cited by 2 publications

References 108 publications

Electron States in MOS Systems

Electron States in MOS Systems

Electron States in MOS Systems

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