Gate-regulated transition temperatures for electron hopping behaviours in silicon junctionless nanowire transistors

Abstract

We investigate gate-regulated transition temperatures for electron hopping behaviours through discrete ionized dopant atoms in silicon junctionless nanowire transistors. We demonstrate that the localization length of the wave function in the spatial distribution is able to be manipulated by the gate electric field. The transition temperatures regulated as the function of the localization length and the density of states near the Fermi energy level allow us to understand the electron hopping behaviours under the influence of thermal activation energy and Coulomb interaction energy. This is useful for future quantum information processing by single dopant atoms in silicon.

Bias-dependent hole transport through a multi-channel silicon nanowire transistor with single-acceptor-induced quantum dots

“…Si junctionless nanowire transistors (JNTs) are reported to be outstanding performers for the future semiconductor quantum industry due to their excellent electrostatic control over channel charges and ease of fabrication. 27 Unlike in IM transistors, carriers in JNTs transport through the accumulation-mode (AM) body channel rather than the IM surface layer, reducing the impact of the channel edge roughness on the transport, thus resulting in a stronger quantum-confinement effect on the carriers. [28][29][30] Moreover, the electric field E C perpendicular to the current flow in a JNT is lower than that in an IM transistor.…”

Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor

“…[1,2] In such nanoscale dimensions, the electronic transport characteristics of the device can perform quite differently from those in bulk silicon. [3,4] Indeed, the reduction of device dimensions enhances the importance of quantum mechanical effects. [2,5,6] For example, the conductance oscillation of nanowire transistors caused by inter-sub-band scattering in one-dimensional (1D) transport, [7,8] the single-electron tunneling current and quantum interference originated from the impurity energy levels of the dopants.…”