2019
DOI: 10.1109/tpel.2018.2884276
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Gate–Emitter Pre-threshold Voltage as a Health-Sensitive Parameter for IGBT Chip Failure Monitoring in High-Voltage Multichip IGBT Power Modules

Abstract: This paper proposes a novel health sensitive parameter, called the gate-emitter prethreshold voltage VGE(pre-th), for detecting IGBT chip failures in multichip IGBT power modules. The proposed method has been applied in an IGBT gate driver and measures the VGE at a fixed time instant of the VGE transient before the threshold voltage occurs. To validate the proposed method, theoretical analysis and practical results for a 16-chip IGBT power module are presented in the paper. The results show a 500 mV average sh… Show more

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Cited by 51 publications
(15 citation statements)
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References 37 publications
(34 reference statements)
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“…Hence the reliability of IGBT needs to be evaluated to get PV inverter reliability. The temperature at the junction layers of the IGBT varies with mission profile variations and leads to failure (bond wire liftoff, wear out, etc.,) [14,15]. Hence junction temperature needs to be calculated for reliability evaluation.…”
Section: Reliability Evaluation Of Pv Invertermentioning
confidence: 99%
“…Hence the reliability of IGBT needs to be evaluated to get PV inverter reliability. The temperature at the junction layers of the IGBT varies with mission profile variations and leads to failure (bond wire liftoff, wear out, etc.,) [14,15]. Hence junction temperature needs to be calculated for reliability evaluation.…”
Section: Reliability Evaluation Of Pv Invertermentioning
confidence: 99%
“…-= JC th TT R P (3) Bond wires lift-off is one of the major failure mechanisms in IGBT module [9], previous researchers had studied a lot of effects of bond wires lift-off on gate voltage [10], conduct voltage [11], or threshold voltage [12]. However, there is still not much study on the effect of lift-off on thermal resistance measurement.…”
Section: R Th = R Die + R D−s + R Dbc + R B−s + R Basementioning
confidence: 99%
“…R th = T J − T C P = ∆T P D + P WB_D (11) Although the rise of junction temperature is caused by P , the total power dissipation of whole module P M is measured as the calculated power dissipation in thermal resistance measurement. The relationship between P M and P is shown in (12). P M = P D + P WB = ( P D + P WB_D ) + P WB_E = P + P WB_E (12) Using the module's power dissipation to measure thermal resistance will lead to a higher calculated power dissipation than the theoretical value.…”
Section: Wb_d P' P P =+ (9)mentioning
confidence: 99%
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“…In [18], the aging process of the solder layer was monitored through the thermal resistance of the IGBT module, and the equivalent thermal network model parameters were updated in real-time accordingly. In [19], the author detected the IGBT chips in the multi-chip IGBT power module through the gate turn-on threshold voltage and accurately judged the number of faulty chips for early warning. In [20], the aging state of the IGBT was monitored by monitoring the difference of the short-circuit current, and the experiment proved that this parameter was little affected by the junction temperature.…”
Section: Introductionmentioning
confidence: 99%