Gate-Driver Integrated Junction Temperature Estimation of SiC MOSFET Modules

Mocevic, Slavko; Mitrovic, Vladimir; Wang, Jun; Burgos, Rolando; Boroyevich, Dushan; Jaksic, Marko; Teimor, Mehrdad

doi:10.1109/ecce44975.2020.9235607

Cited by 9 publications

(2 citation statements)

References 26 publications

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“…Building a junction temperature observer that prevents over-temperature failures involves establishing the correlation between the junction temperature and the instantaneous turn-on drain current [110]. Considering the aging of SiC MOSFET modules, lifetime prediction methods can be developed to prevent unexpected failures and as a reminder for maintenance [111].…”

Section: Diagnostic Methodsmentioning

confidence: 99%

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

Shi

Ramones

Liu

et al. 2023

IET Power Electronics

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Compared with silicon‐based Insulated Gate Bipolar Transistors (IGBTs), silicon carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by higher operating temperatures, switching speeds and switching frequencies, and are considered the next evolutionary step for future electric drives. The application of SiC MOSFETs in the field of electrified vehicles has brought many benefits, such as higher efficiency, higher power density, and simplified cooling system, and can be seen as an enabler for high‐power fast battery charging. This article reviews the benefits of SiC MOSFETs in different electrified vehicle (EV) application scenarios, including traction inverters, on‐board converters, and off‐board charging applications. However, replacing Si‐IGBTs with SiC MOSFETs introduces several new technical challenges, such as stronger electromagnetic interference (EMI), reliability issues, potential electric machine insulation failure due to high transient voltages, and cooling difficulties. Compared to mature silicon‐based semiconductor technologies, these challenges have so far hindered the widespread adoption of SiC MOSFETs in automotive applications. To fully exploit the advantages of SiC MOSFETs in automotive applications and enhance their reliability, this paper explores future technology developments in SiC MOSFET module packaging and driver design, as well as novel electric machine drive strategies with higher switching frequencies, and optimized high‐frequency machine design.

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Section: Diagnostic Methodsmentioning

confidence: 99%

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

Shi

Ramones

Liu

et al. 2023

IET Power Electronics

View full text Add to dashboard Cite

show abstract

“…Furthermore, it operates only with power modules and is not applicable for discrete devises. Another hardware approaches based on the implementation of the intelligent gate drivers were developed in [25] and [26]. They are capable of operating with discrete transistors, however, they are also at the stage of prototyping and absent in the market.…”

Section: State Of the Artmentioning

confidence: 99%

Inverter Temperature Monitoring of Cordless Tool Motor Drives

Dianov¹

2023

IEEE Open J. Ind. Electron. Soc.

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Nowadays, with the recent advances in battery technologies, cordless tools are gaining more popularity and many manufacturers have enhanced their series of autonomous devices with powerful instruments like circular saws and punches. However, the development of battery-operated tools is not an easy task and many challenging problems must be solved. The most significant of these are limited working time without recharging and controllability of the motor drives. As a result, tool manufacturers are substituting conventional universal motor drives with permanent magnet synchronous motor drives, which require more complicated electronics, but can provide the desired characteristics. In order to guarantee normal operation and satisfy safety standards, devices have to properly handle any possible hazardous situations. One of these situations is overheating of inverter switches, thus, the temperature of each transistor has to be monitored. This task is typically implemented using negative temperature coefficient (NTC) resistors, whereby voltage is sensed by analog to digital converter of microcontroller. This article proposes a software algorithm for temperature estimation and monitoring of each inverter switch, which allows excludes NTCs, decreasing overall costs and saving space on the printed circuit board. Proper operation of the developed technology is proven by the experimental results and safety certification according to UL60730.

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An Overview on MOSFET Drivers and Converter Applications

Şahin¹,

Blaabjerg

2021

Electric Power Components and Systems

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Gate-Driver Integrated Junction Temperature Estimation of SiC MOSFET Modules

Cited by 9 publications

References 26 publications

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

Inverter Temperature Monitoring of Cordless Tool Motor Drives

An Overview on MOSFET Drivers and Converter Applications

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