An Overview on MOSFET Drivers and Converter Applications

Şahin, Mustafa Ergin; Blaabjerg, Frede

doi:10.1080/15325008.2021.2002477

Cited by 7 publications

(4 citation statements)

References 49 publications

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“…So, it must come up with fresh ideas for creating quick drivers. Silicon carbide MOSFET uses are currently some of the results and new applications [7].…”

Section: Figurementioning

confidence: 99%

MOSFET Characteristics and Related Biological Devices Analysis

Zhou

2024

HSET

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With the development of modern electronic information technology, portable, fast, and high-performance electronic information products have brought great changes to people's life and health. People pay more and more attention to electronic information products. Not only in the civil aspect, high-end precision electronics industry, such as artificial intelligence, the new generation of electronic communication technology, medical devices, aerospace, and defense fields are based on various chips, to establish a complete national industrial system. This article describes MOSFET basic introduction, working principle and structure, etc., which plays an important role in the modern electronic information industry, including its application in implantable medical devices-current stimulator. The conclusion of this article is that with more and more capital and talent investment, the future of the chip industry with MOSEF as the basic component is very optimistic. The significance of this paper is to introduce the existing MOSFET technology and put forward views for future development.

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“…So, it must come up with fresh ideas for creating quick drivers. Silicon carbide MOSFET uses are currently some of the results and new applications [7].…”

Section: Figurementioning

confidence: 99%

MOSFET Characteristics and Related Biological Devices Analysis

Zhou

2024

HSET

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“…where Eg is the energy bandgap of silicon. By using (15), the temperature dependency of VTS can be defined as…”

Section: Return Returnmentioning

confidence: 99%

“…Micro-structured AFSs (μAFSs) with the control of individual micro-LED (μLEDs) adopt high-power gallium nitride-based devices, as depicted in Fig. 2(b) [16], but individual light is controlled by dedicated on/off switches without an active-matrix driver [15]. To adopt complex controls of individual pixels for μAFSs, a conventional active-matrix driver for a pixel with a current driver adjusted by a PWM signal can be applied in display applications, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Temperature-Aware Adaptive Control for Automotive Front-Lighting System

2022

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Adaptive front-lighting systems (AFSs) have been widely adopted to automotive industries for providing higher driver's safety. As their light sources, multi-string light-emitting diodes (LED) arrays have been widely adopted because of their simpler driver controls. Recently, micro-structured AFSs (μAFSs) with a micro-LED (μLED) array are highly demanded for their controllability of individual LEDs. However, the integration of a μLED array and its high-power active-matrix driver are not available on the market. Moreover, a high-power driver causes not only a significant variation in driving current, but also a higher power density requiring over-temperature protection (OTP). In this paper, the average current through each μLED is adaptively controlled with pulse width modulation (PWM) in conjunction with an additional PWM control for temperature calibration. Experimental results with a 16 × 16 μLED array placed on top of the proposed driver show that a 5-bit PWM signal controls the average current through each μLED cell up to 11 mA. The maximum current error of 4.11% at 100 °C is reduced to 0.23%. When OTP is enabled, the amount of average pixel current reduction depends on the given temperature. The maximum power efficiency of the proposed μAFSs driver is as high as 92.3%.

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“…In the same doped semiconductor device, the higher the operating temperature, the higher the electron energy in the outer layer of the intrinsic semiconductor material will increase, break away from the bondage of the protons, and transition to form a more free electron and hole pairs. Under the diffusion movement, the built-in electric field will increase, causing the barrier capacitance to increase [6]. However, as the working temperature continues to rise, electrons and holes drift under the action of the built-in electric field, weakening the concentration difference caused by the diffusion movement.…”

Section: Effect Of Temperature On Barrier Capacitancementioning

confidence: 99%

Study on the barrier capacitance characteristics of switching diode

xiong

Rui

Jin

et al. 2022

International Workshop on Automation, Control, and Communication Engineering (IWACCE 2022)

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Switching Diodes are used in high-frequency circuits, and their capacitance effect cannot be ignored. In this paper, based on the research of the barrier capacitance model of switching diode, the test method and test circuit of barrier capacitance was studied, and the influence of different voltages and working temperatures on barrier capacitance were analyzed, and some suggestions are put forward for device suppliers and users.

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An Overview on MOSFET Drivers and Converter Applications

Cited by 7 publications

References 49 publications

MOSFET Characteristics and Related Biological Devices Analysis

MOSFET Characteristics and Related Biological Devices Analysis

Temperature-Aware Adaptive Control for Automotive Front-Lighting System

Study on the barrier capacitance characteristics of switching diode

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