Gate-controlled multi-bit nonvolatile ferroelectric organic transistor memory on paper substrates

Abstract

A high-performance multi-bit organic transistor nonvolatile-memory, with good mechanical durability and environmental stability, was prepared for the first time on a paper substrate.

Solution‐Processed Dual Gate Ferroelectric–Ferroelectric Organic Polymer Field‐Effect Transistor for the Multibit Nonvolatile Memory

“…Most of the multibit memory techniques reported use a single memory space and apply various techniques within the single ferroelectric memory space, [8][9][10][11][12][13][14][15] however, for possible high density storage application with an extra memory space created by spatially separating the ferroelectric gate insulator for additional memory space is demonstrated. Based on the results achieved so far in the fabricated DG Fe-FeMT where the bottom and top gates sweeping operations exhibit ferroelectric properties independently, the realization of multibit memory states was then explored.…”

Application of organic field-effect transistors in memory

“…13a. 82 In this work, the channel conductance is modulated by changing the magnitude of the gate voltage. Taking 40, À20, À30 and À40 V as ''00'', ''01'', ''10'' and ''11'' states, respectively, the device realizes multi-level storage, as shown in Fig.…”

“…Four different I D results (I D-00 , I D-01 , I D-10 and I D-11) of V G at À40, À20, À30 and À40 V are used for the four different states of multi-level memory. Reproduced with permission 82. Copyright 2019, Royal Society of Chemistry.…”

Multilevel storage and photoinduced-reset memory by an inorganic perovskite quantum-dot/polystyrene floating-gate organic transistor

“…[1][2][3] Among various types of OFET memory, the oating-gate OFET memory (FGOFETM) is considered as a candidate for the next generation organic ash memory due to tunable oating-gate for device sizing, low temperature solution-processability, fast data storage and viabilities of device fabrication on exible substrates. 4,5 Compared to traditional oating gate, the composite lm, monodispersed nanoparticles (NPs) or quantum dots (QDs) impregnated in a dielectric polymer, as a oating gate layer has following advantages: [6][7][8] (1) the oating gate layer can be prepared by a simple and highly effective solution process method; (2) the morphology and nano-oating gate structure can be controlled by adjusting the mixing ratio of nanoparticles materials and polymers, therefore improving the OFET memory performance; (3) the memory devices have higher lm uniformity and lower gate leakage. In addition, it also has better size scalability, higher data storage density and prevention of lateral charge movement.…”

“…3,8,[12][13][14][15] However, the capability of storing multilevel information is one of the biggest challenges in memory technologies. 5,10,11,[15][16][17] Thus, there is an urgent demand to search for suitable NPs/QDs and organic semiconductor (OSC) channel materials for highly efficient, multilevel and endurable OFET memory devices.…”