Gate All Around Nanowire TFET with High ON/OFF Current Ratio

Nanowire gate all around-TFET-based biosensor by considering ambipolar transport

“…The charge of the biomolecule can show the notable impact on sensitivity for low dielectric constant valued biomolecules. However, when the dielectric constant of the biomolecule increases, it will dominate and reduce the charge of the biomolecule on sensitivity [23][24][25][26][27].…”

“…The nanowire GAA-TFET biosensor shows excellent improvement in the device sensitivity in terms of high drain current variation. Apart from this, the nanowire GAA-TFET biosensor is capable of exhibiting high, prominent threshold voltage characteristics [22][23][24][25][26][27][28][29][30][31][32]. The device's surrounded gate structure facilitates the gate with high controllability over the intrinsic channel and makes it operate at low voltages.…”

Design and Investigation of a Novel Gate-All-Around Vertical Tunnel FET with Improved DC and Analog/RF Parameters

“…The transfer characteristics of the proposed GAA-VTFET is compared with the other structures of TFET, such as DCG, 28 DU-Cyl-GAA, 29 HD-GAA, 30 GAA-VERTICAL-NW 31 and conventional GAA-TFET. 22 The various data of transfer characteristics including I ON , I OFF , I ON /I OFF , SS AVG , V T II) are extracted by re-designing and simulating all the devices using Sentaurus TCAD. From Fig.…”

“…Since the z E-mail: karthik.kadava@gmail.com; chandankumarpandey@gmail.com ECS Journal of Solid State Science and Technology, 2022 11 111007 entire source is covered by the channel and the direction of gate electric field is perpendicular to the source/channel interface, an enhancement in the tunneling area along with the line tunneling significantly improve the ON-state current and SS of the proposed device. In comparison with the conventional GAA-TFET, 22 the subthreshold leakage current is found to be tremendously reduced by an order of five in the proposed GAA-VTFET, and it mainly happens because the channel/drain interface is perpendicular to the flow of charge carriers at source/channel interface during OFF-state. Further, a dielectric layer employed underneath channel and drain extending up to source supresses the fringing field induced by the gate and therefore, reduces the leakage of charge carriers at OFFstate.…”

Gate-All-Around Nanowire TFET with Heterojunction and Core Insulator: Design and Analysis

“…Moreover, the SS and leakage current may also be further improved. 6,12,[17][18][19][20] Furthermore, Germanium material integrates well on Si substrates, has a narrow effective bandgap (E g ), is relatively inexpensive, and has great symmetry. Low E g generates a high BTBT current, which increases the I ON /I OFF ratio.…”