Nanowire gate all around-TFET-based biosensor by considering ambipolar transport

Reddy, N. Nagendra; Panda, Deepak Kumar

doi:10.1007/s00339-021-04840-y

Cited by 24 publications

(11 citation statements)

References 34 publications

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“…IIP3 is one such parameter used to anticipate low level effect of intermodulation, it is stated as intercepted input power point where 3rd order and 1st order intersects. 31,32 Higher values of IIP3 should be obtained for better linearity of the device. The mathematical expression of IIP3 can be stated as in Equation ( 9):…”

Section: Impact Of Varying the Fin Width On Different Linearity Param...mentioning

confidence: 99%

Performance analysis of GaN‐FINFET for RFIC application with respect to different FinWidth's

Reddy

Panda

2023

Int J Numerical Modelling

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GaN has become a prevailing semiconductor in case of power and RF applications. The higher ranking material parameters of GaN, like wider band‐gap, the higher breakdown electric field as well as higher electron velocity when compared to materials like Si, SiC, GaAs etc; allow GaN FINFET to reveal potential advantages such as high voltage and high frequency applications. In this work, a comprehensive study on RF and linearity analysis on Heterojunction‐free GaN layer FINFET through visual technology computer‐aided design (TCAD) device simulator is been illustrated. The influence of varying the Finwidth's of the device on numerous RF parameters like drain current, transconductance (gm), output conductance (gd), gate capacitances(Cgd and Cgs), cut‐off frequency (fT) are studied. And also, the impact of varying the Finwidth's of the device on the numerous linearity parameters like gm2, gm3, VIP3, IIP3, 1 dB compression point were also studied. It is been observed that the higher Finwidth value is more worthy for radio frequency integrated circuit (RFIC) applications.

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Section: Impact Of Varying the Fin Width On Different Linearity Param...mentioning

confidence: 99%

Performance analysis of GaN‐FINFET for RFIC application with respect to different FinWidth's

Reddy

Panda

2023

Int J Numerical Modelling

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“…Separate Cosine Transfigure (DCT) and Multi-Scale Transform are often utilised transforms for image emulsion (MST). Deep literacy (DL) has recently flourished in a number of image processing and computer vision operations [7][8][9][10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Empirical Wavelet Transform Method for Enhancement of Medical Image Fusion

Nagendra¹,

Bitra

Srinivasa

2023

EAE

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The process of creating an image's emulsion is selecting the crucial details from numerous images and combining them into smaller images, often one bone. In the areas of satellite imaging, remote seeing, target shadowing, medical imaging, and many other areas, image emulsion is quite useful. This design tries to illustrate how Empirical Wavelet transfigures work when used with the Simple Average Emulsion Rule to emulsify multi-focus images. The suggested approach has been tested using common datasets for merging images with various focal points. Empirical Wavelet Transform is primarily a method that uses an adaptive approach to produce a Multi-Resolution Analysis of the signal. The effectiveness of the suggested approach is calculated in a variety of ways. Visual perception and the evaluation of common quality metrics, such as Root Mean Squared Error, Entropy, and Peak Signal to Noise ratio, are used to compare the performance of the proposed system. The proposed fashion based on the Empirical Wavelet Transform (EWT) outperforms the existing methods, according to the study of the experimental results. According to the suggested criteria, the fused image's entropy should be higher than the component images' because the emulsion's efficiency decreases as entropy increases. This technique takes MRI and CT scans into account.

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“…So the DM-TFET biosensor suppress the difficulties faced by the CFET biosensor in terms of sensitivity, response time, power consumption. The superior characteristics of the DM-TFET biosensors attracted many researchers to carry out immense research in this field and reported impressive statistics device sensitivity [11][12][13][14][15][16][17][18][19][20][21][22][23][24]. The low on current (I on ) and ambipolar conductivity are the two stumbling blocks for achieving high performance for TFET devices, so the device is not recommended for digital applications.…”

Section: Introductionmentioning

confidence: 99%

“…Many techniques are reported to address the difficulties faced by the TFET biosensor out of all the effective structural modification devices, and gate workfunction engineered methods yield full fruit results [25][26][27][28][29][30][31][32][33][34][35][36][37]. The Z-shaped gate hetero dielectric horizontal source pocket TFET Z-shaped gate hetero dielectric horizontal source pocket (ZHP-DM-TFET) based biosensor [18] reported high current (I on ) sensitivity and improved stability by suppressing the fringing field effects. ZHP-DM-TFET biosensors cut down the ambipolar conductivity of the device without any additional arrangement [18].…”

Section: Introductionmentioning

confidence: 99%

“…The Z-shaped gate hetero dielectric horizontal source pocket TFET Z-shaped gate hetero dielectric horizontal source pocket (ZHP-DM-TFET) based biosensor [18] reported high current (I on ) sensitivity and improved stability by suppressing the fringing field effects. ZHP-DM-TFET biosensors cut down the ambipolar conductivity of the device without any additional arrangement [18].…”

Section: Introductionmentioning

confidence: 99%

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Design and investigation of dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal pocket TFET device as a label-free biosensor

Reddy¹,

Panda²

2022

J. Micromech. Microeng.

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In this article, a dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal source pocket Tunnel Field-Effect Transistor [DM-TMGOS-ZHP-TFET] structure has been investigated for the application of label free-biosensor. This work explores the advantage of gate work function engineering along with the gate-oxide-stack approach for the Z-shaped gate horizontal source pocket Tunnel Field-Effect Transistor [ZHP-TFET] for the first time. An asymmetric nano-cavity is created adjacent to the source-channel junction to immobilize the target biomolecules conjugation to the proposed device. The sensitivity of the device is thoroughly investigated in terms of average subthreshold swing (ss), threshold voltage(Vth) and the switching ratio (Ion/Ioff) of the proposed device with the variation of the dielectric constant value inside the nano-gap under the gate electrode. The device characteristics are investigated with different combinations of metal work functions to match the desired feature and sensitivity of the device. In addition, the sensitivity analysis of the proposed device is analyzed in the presence of both positive and negative charged biomolecules in the cavity region to study the charge effect on label-free detection of the device. A comparative study is conducted between a single metal gate ZHP-DM-TFET [SMG- ZHP-DM-TFET] biosensor with the DM-TMGOS- ZHP-TFET biosensor explores the advantage of gate-work function engineering with a gate-oxide-stack approach. Interestingly the DM-TMGOS- ZHP-TFET biosensor shows superior results with a high current ratio sensitivity of 103 which is ten times more than the SMG- ZHP-DM-TFET biosensor and this deice also exhibits low subthreshold characteristics.

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Nanowire gate all around-TFET-based biosensor by considering ambipolar transport

Cited by 24 publications

References 34 publications

Performance analysis of GaN‐FINFET for RFIC application with respect to different FinWidth's

Performance analysis of GaN‐FINFET for RFIC application with respect to different FinWidth's

Empirical Wavelet Transform Method for Enhancement of Medical Image Fusion

Design and investigation of dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal pocket TFET device as a label-free biosensor

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