GaSb/InGaAs quantum dot–well hybrid structure active regions in solar cells

Laghumavarapu, Ramesh B.; Liang, Baolai; Bittner, Zachary S.; Navruz, Tuğba Selcen; Hubbard, Seth M.; Norman, A. G.; Huffaker, Diana L.

doi:10.1016/j.solmat.2013.02.027

Cited by 31 publications

(14 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Secondly, GaAsSb was shown to form a type-II band structure with the InAs QDs, which spatially separates the photo-excited charge carriers. This is expected to reduce carrier recombination and improve the carrier separation [11][12][13]. Type-II behavior between the QDs and QW is dependent on the Sb composition in the GaAsSb layer, and was previously reported to occur when the Sb composition reached 14% [14,15].…”

Section: Introductionmentioning

confidence: 93%

InAs/GaAsSb quantum dot solar cells

Hatch¹,

Wu²,

Sablon³

et al. 2014

Opt. Express

View full text Add to dashboard Cite

The hybrid structure of GaAs/GaAsSb quantum well (QW)/InAs quantum dots solar cells (QDSCs) is analyzed using power-dependent and temperature-dependent photoluminescence. We demonstrate that placing the GaAsSb QW beneath the QDs forms type-II characteristics that initiate at 12% Sb composition. Current density-voltage measurements demonstrate a decrease in power efficiency with increasing Sb composition. This could be attributed to increased valence band potential in the GaAsSb QW that subsequently limits hole transportation in the QD region. To reduce the confinement energy barrier, a 2 nm GaAs wall is inserted between GaAsSb QW and InAs QDs, leading to a 23% improvement in power efficiency for QDSCs.

show abstract

Section: Introductionmentioning

confidence: 93%

InAs/GaAsSb quantum dot solar cells

Hatch¹,

Wu²,

Sablon³

et al. 2014

Opt. Express

View full text Add to dashboard Cite

show abstract

“…9, 10 This concept has been studied in some detail using several different material systems for the quantum dot layers, for example, InAs/GaAs, InGaAs/GaAs, and GaSb/InGaAs. [11][12][13] Most experiments have demonstrated a remarkable increase in short circuit current density, J sc , due to the presence of the quantum dot intermediate band.…”

Section: Introductionmentioning

confidence: 99%

Band filling effects on temperature performance of intermediate band quantum wire solar cells

Kunets

Furrow

Ware

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inInGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells Appl. Phys. Lett. 105, 083124 (2014); 10.1063/1.4894424 Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell Detailed studies of solar cell efficiency as a function of temperature were performed for quantum wire intermediate band solar cells grown on the (311)A plane. A remotely doped one-dimensional intermediate band made of self-assembled In 0.4 Ga 0.6 As quantum wires was compared to an undoped intermediate band and a reference p-i-n GaAs sample. These studies indicate that the efficiencies of these solar cells depend on the population of the one-dimensional band by equilibrium free carriers. A change in this population by free electrons under various temperatures affects absorption and carrier transport of non-equilibrium carriers generated by incident light. This results in different efficiencies for both the doped and undoped intermediate band solar cells in comparison with the reference GaAs p-i-n solar cell device. V C 2014 AIP Publishing LLC.

show abstract

“…10 As a complement to the GaSb QDs, the InGaAs QW provides additional absorption beyond the GaAs band edge, helping to enhance infrared photoresponse.…”

mentioning

confidence: 99%

Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

Liang

Simmonds

et al. 2015

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

show abstract

GaSb/InGaAs quantum dot–well hybrid structure active regions in solar cells

Cited by 31 publications

References 27 publications

InAs/GaAsSb quantum dot solar cells

InAs/GaAsSb quantum dot solar cells

Band filling effects on temperature performance of intermediate band quantum wire solar cells

Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

Contact Info

Product

Resources

About