GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3μm) grown by MBE

We design, fabricate, and study GaSb-based bipolar cascade vertical-cavity surface emitting lasers (VCSELs) for laser emission of around 2.3 µm. An electrically coupled two-stage design shows high-temperature continuous wave (CW) operation and an approximately one-order-of-magnitude increase of CW output power at 30°C as compared with single-stage VCSELs.Index Terms-Bipolar cascade vertical-cavity surface emitting lasers (VCSELs), GaSb, mid-infrared (MIR).

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“…The growth was performed in a single run lasting for ∼17 hours. More details on the growth procedure can be found in [13].…”

Section: Methodsmentioning

confidence: 99%

“…Aperture diameters ranging from 9 μm to 19 μm have been realized. Such large apertures result in multimode laser emission [13], [14] which is not suited for gas analysis. However this does not impact the study of the cascade VCSEL concept.…”

Section: Methodsmentioning

confidence: 99%

Mid-IR GaSb-Based Bipolar Cascade VCSELs

Sanchez

Cerutti

Tournié

2013

IEEE Photon. Technol. Lett.

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“…GaSb-based VCSELs, operating in the same mid-IR region, have single longitudinal mode operation and so could be an improved replacement for DFB lasers. [1][2][3] The major challenge in achieving efficient lasing in VCSELs is strongly dependent on the wavelength alignment between the peak of the gain spectrum of the active quantum well (QW) layers and the cavity mode (CM) dip in the reflectance spectrum of the VCSEL Fabry-Perot structure. 4,5 When other effects such as self-heating and non-radiative recombination have been taken into account, achieving an optimized alignment at the desired operating temperature between the energy positions of the QW ground-state transition (E QW ) and the CM dip in the reflectance spectrum (E CM ) should give improved device performance.…”

Section: Introductionmentioning

confidence: 99%

Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

Chai

Hosea

Fox

et al. 2014

Journal of Applied Physics

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We report angle dependent and temperature dependent (9 K-300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 lm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 6 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices. V C 2014 AIP Publishing LLC.

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“…Thus, high-reflectivity DBRs are also needed in this wavelength range. were used in the long-wavelength range above ∼2 μm [9][10][11][12]. To realize the DBRs with a high reflectivity over a wide wavelength range, therefore, they should be designed by using materials with a high refractive index contrast.…”

Section: Introductionmentioning

confidence: 99%

“…The reflectivity and stop bandwidth of the DBRs are dependent on the refractive index contrast between the highand low-indices (n) materials [5]. Besides, the fabrication cost of these DBRs is also high due to the use of expensive etching and growth equipment [8][9][10]. Over the past few years, the deeply etched DBRs with grating structures which are used for light traveling in a plane parallel to the substrate surface have been studied for waveguide applications [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Design and fabrication of amorphous germanium thin film-based single-material distributed Bragg reflectors operating near 22 μm for long wavelength applications

Leem

2013

J. Opt. Soc. Am. B

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We report the design and fabrication of single-material distributed Bragg reflectors (DBRs) composed of amorphous germanium (a-Ge) thin films by a glancing angle deposition and their optical reflectance characteristics in the long wavelength region of 1.7-3.1 μm, together with the aid of theoretical analysis using a rigorous coupledwave analysis method. The refractive index of the a-Ge films is estimated from the measured transmittance spectra. The high and low refractive indices a-Ge films (i.e., Δn ∼ 2.18), which compose the alternative layers of DBRs, were fabricated at two incident vapor flux angles (θ α ) of 0°and 80°, respectively, by determining the quarter wavelength thicknesses of 135 nm at θ α 0°and 291 nm at θ α 80°for a center wavelength (λ c ) of ∼2.2 μm. For the fabricated a-Ge/a-Ge DBR with only 5 pairs, the normalized stop bandwidth (Δλ∕λ c ) of ∼22.3% was measured while maintaining high reflectance values of >99% over a wide wavelength range of 2.06-2.55 μm, which indicates a reasonable consistency with the calculated reflectance results.

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GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3μm) grown by MBE

Cited by 28 publications

References 17 publications

Mid-IR GaSb-Based Bipolar Cascade VCSELs

Mid-IR GaSb-Based Bipolar Cascade VCSELs

Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

Design and fabrication of amorphous germanium thin film-based single-material distributed Bragg reflectors operating near 22 μm for long wavelength applications

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