Gas Source MBE Growth of GaSb

Abstract

Gas source molecular beam epitaxal growth of GaSb is investigated. Sb(CH3)3 is found to decompose effectively when the cracking furnace temperature is higher than 800°C. A mirror-like GaSb epi-layer is shown to be obtainable using Sb(CH3)3 and a solid Ga source for the first time.

Photocarrier dynamics in undoped and Na-doped Cu2ZnSnS4single crystals revealed by ultrafast time-resolved terahertz spectroscopy

“…he quaternary compound and kesterite-structure semiconductor Cu 2 ZnSnS 4 (CZTS) has been considered as an alternative light absorber for next-generation low-cost thin-film solar cells, 1,2) because it is composed of earth-abundant elements and has high absorption coefficients in the visible and near-infrared spectral regions. 3,4) It has been suggested that the unique dynamic characteristics of photocarriers in CZTS, including the slow energy relaxation of hot photocarriers and the long lifetime of free carriers, 5) lead to efficient charge separation and collection for the photocurrent in CZTS-based solar cells. Consequently, the short-circuit current density obtained in the best Cu 2 ZnSn(S x Se 1−x ) 4 (CZTSSe)-based solar cells is as high as approximately 80% of the Shockley-Queisser limit with nonconcentrated sunlight.…”

“…4,25) The optical penetration depths of excitation photons used in the PLE measurements are estimated to vary from a sub-micrometer scale to a few micrometers. 3,32) Band bending at the sample surface was reported to be fairly small for free-standing CZTSSe polycrystalline thin films. 33) Therefore, at present, we do not consider the effects of the band bending at the sample surface on the optical responses of CZTS single crystals.…”

Temperature Dependence of Cu$_{2}$ZnSnS$_{4}$ Photovoltaic Cell Properties

“…ecently, Cu 2 ZnSnS 4 (CZTS) has become a candidate material for new photovoltaic cells. [1][2][3][4] This is because (1) none of the elements in CZTS are rare or harmful, and (2) CZTS has a suitable bandgap energy (E g ) of 1.5 eV. However, the reported efficiency of CZTS cells is below 10%, [5][6][7][8] which is lower than expected.…”

EFFECT OF TIN PRECURSORS ON THE DEPOSITION OF Cu2ZnSnS4 THIN FILMS

“…Hence CZTS is considered to be a potential absorber material [3]. CZTS films have salient properties such as direct band gap nature (1.45 eV), exhibiting high absorption coefficient (≥ 10 4 cm -1 ), tetragonal structure and p-type in nature [4]. The elements in these absorber layers are available abundantly at low cost.…”