Gas evolution studies for structural characterization of hexamethyldisilazane-based <i>a</i>-Si:C:N:H films

Gerstenberg, Kurt; Beyer, W.

doi:10.1063/1.339556

Cited by 26 publications

(9 citation statements)

References 5 publications

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“…Very high values at low deposition temperatures indicate high elasticity of the film that is in good agreement with existing conception of percolation theory [11][12][13] for low-coordinated materials. Note, that these films have high concentration of methyl groups and may be porous [17]. So, the observed effect is caused by poor covalent cross-linking.…”

Section: Resultsmentioning

confidence: 99%

Scanning probe microscopy and nanoindentation studies of silicon carbonitride films obtained by PECVD from hexamethyldisilazane

Shayapov¹,

Khomyakov²,

Rumyantsev³

2014

LoM

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Silicon carbonitride films were deposited by PECVD from hexamethyldisilazane. To investigate their surface and to determine the parameters of roughness, scanning probe microscopy was applied. Mechanical properties of the films (hardness, Young's modulus and elastic recovery) were studied by nanoindentation method. It has been found out that hardness and Young's modulus increase along with the growth of deposition temperature. Elastic recovery is close to 100 % at low deposition temperature (lower than 250 °C) and decreases with the rise of synthesis temperature. The results are explained by an increase in concentration of covalent bonds and other changes in chemical and phase composition.

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Section: Resultsmentioning

confidence: 99%

Scanning probe microscopy and nanoindentation studies of silicon carbonitride films obtained by PECVD from hexamethyldisilazane

Shayapov¹,

Khomyakov²,

Rumyantsev³

2014

LoM

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“…Films of a-Si : C : N : O : H were prepared by a plasma process based on the fragmentation of hexamethyldisilazane (HMDSN) in presence of N 2 and impurities of O2 [10]. Composition and structure of the deposits are related to their physical properties and can be manipulated by various process parameters, e.g., rf power, gas pressure, bias voltage and substrate temperature.…”

Section: Methodsmentioning

confidence: 99%

“…A wide variation of the hydrogen concentration in organo-silicon films was established by chemical analysis, infrared spectroscopy and hydrogenevolution studies [10]. These materials are studied as electrical insulation layers and protective coatings preventing corrosion [-10-1.…”

mentioning

confidence: 99%

Quantitative electron-probe microanalysis of light elements: Determination ofa-Si?C?N?O?H insulating films

Willich

Obertop

1989

Mikrochim Acta

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Amorphous Si : C : N : O : H films (1-3 #m) are studied by EPMA after deposition of gold (1-5 nm) as a conductive coating. Its influence on the k-ratios (X-ray intensity relative to an uncoated standard) of silicon, carbon, nitrogen and oxygen is described as a linear function of the simultaneously determined k-ratio of gold. The k-ratios representing the uncoated specimen are obtained by extrapolation and, in combination with the PAP matrix correction model, quantitative EPMA can be performed with an analytical error of 2-5%, as it is demonstrated by samples of SiC, Si3N 4 and SiO 2. No systematic shift of the concentrations is observed for layers ofa-Si : C : N : O : H determined at various electron energies of 5-12.5 keV. Hydrogen is calculated by difference and the concentrations prove to be a useful estimate in agreement with the results of chemical analysis. Si-K~/Si-Kfl' spectra recorded on organo-silicon films and binary silicon compounds point out significant differences concerning the formation of Si-C, Si-N and Si-O chemical bonds.

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“…With a part of their valencies covalently bonded, silicon, carbon, and nitrogen atoms form a network, while remaining valencies are terminated by monovalent network modifiers like hydrogen atoms and methyl groups. -' E E Within the atomic voids of the three-dimensional o network, noble gas atoms or gas molecules like N 2 [19] can be dissolved. 2) dependent on the extent of HMDSN N fragmentation in the plasma.…”

Section: -mentioning

confidence: 99%

Film deposition in a radial flow reactor by plasma polymerization of hexamethyldisilazane

Gerstenberg

1990

Colloid & Polymer Sci

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Polymeric substrates can be coated at low temperatures by means of an electric discharge fed by organic gases. Since both the composition and the structure of the deposited material can be varied in a wide range by the choice of starting compound and deposition conditions, the properties of the coatings can be adjusted specifically to fulfill many required demands. After a general introduction of the deposition method, a typical deposition apparatus is described and an optimization procedure of the deposition process is proposed. The intermediate position of plasma polymerized materials between common polymers and amorphous solids is demonstrated for films from hexamethyldisilazane. Based on the assumption of a continuous random network structure the density of covalent bonds and the total volume fraction of micro-voids can be evaluated and compared with application relevant properties such as mechanical stiffness and gas permeability. The model of a continuous random network structure may be valid for plasma polymerized material in general.

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Gas evolution studies for structural characterization of hexamethyldisilazane-based a-Si:C:N:H films

Abstract: Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films

Cited by 26 publications

References 5 publications

Scanning probe microscopy and nanoindentation studies of silicon carbonitride films obtained by PECVD from hexamethyldisilazane

Scanning probe microscopy and nanoindentation studies of silicon carbonitride films obtained by PECVD from hexamethyldisilazane

Quantitative electron-probe microanalysis of light elements: Determination ofa-Si?C?N?O?H insulating films

Film deposition in a radial flow reactor by plasma polymerization of hexamethyldisilazane

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