Gap Opening of Graphene by Dual FeCl₃-Acceptor and K-Donor Doping

Superb Electrically Conductive Graphene Fibers via Doping Strategy

“…The pure GP had a negative charge concentration (electron) of 3.959 × 10 19 cm −3 , and a carrier mobility of 283 cm 2 V −1 s −1 . Br 2 and FeCl 3 are more electronegative than graphene, therefore, GP‐Br 2 (10% doping content) and GP‐FeCl 3 (15% doping content) had a typical p‐type behavior with positive charged carrier concentration (holes) of 2.687 × 10 20 and 1.427 × 10 20 cm −3 , respectively. In contrast, K‐doped GP (26% doping content) behaved a n‐type behavior with much higher carrier concentration (2.068 × 10 21 cm −3 ) than that of pure GP by about two orders of magnitude and a carrier mobility of 150.9 cm 2 V −1 s −1 , in good agreement with the measurement in GIC reported by Onn et al The drop in carrier mobility of the GP‐K is possibly because that the intercalation process can produce some defects in graphene crystallites and doped potassium atoms are charged‐impurity scatterers which limit the carrier transport .…”

Engineering the Electronic Structure of Graphene

“…Most recently, Yang et al proposed a novel model that by adsorption of FeCl 3 (acceptor type) and K (donor type) on both sides of AB‐stacked BLG, the dual doping effect would give rise to the opening of a large bandgap while keep its Fermi level located in the gap (Figure 7b). The charge transfer between graphene and adsorption compounds (K and FeCl 3 ) would induce two strong localized electrical displacement fields D 1 and D 2 , and thus the energy gap is opened prominently (∼0.27 eV) as it depends on $ \bar D $ = ( D 1 + D 2 )/2, while the shifted Fermi surface compared to the pristine BLG is not obvious as the net carrier doping δ D = ( D 2 – D 1 ) is small 73. Similar structure has been demonstrated experimentally that the BLG doped by strong electronegative molecules (p‐doping) on both top and bottom surfaces, presenting an enhanced current on/off ratio which indicates the bandgap opening 74.…”

Tailoring Electronic and Magnetic Properties of MoS2 Nanotubes

“…Several modifications have been conducted to achieve a finite band gap, such as graphene nanoribbon, 6,7 dual doping, 8,9 vertical electric field, 10 and so on. A number of carbon nanotubes can show a finite size of band gap; however, it requires postprocessing to extract semiconducting nanotubes from mixed bunches of both metallic and semiconducting carbon nanotubes.…”