Engineering the Electronic Structure of Graphene

Zhan, Da; Yan, Jiaxu; Lai, Linfei; Ni, Zhenhua; Liu, Lei; Shen, Zexiang

doi:10.1002/adma.201200011

Cited by 154 publications

(111 citation statements)

References 188 publications

(270 reference statements)

Supporting

Mentioning

101

Contrasting

Order By: Relevance

“…The asymmetry between the conduction band () and the valence band (), which is especially pronounced in the vicinity of the point, which is attributed to the non-zero overlap parameter . However, the electronic band structure of graphene can be simply altered by applying electric field [6,57–61] or providing substrates [62,63], and precisely engineered by introducing disorders into the hexagonal lattice [64–68], which will be discussed in detail in later sections.…”

Section: The Structure Of Graphenementioning

confidence: 99%

Structure of graphene and its disorders: a review

Gao

Lee

et al. 2018

Science and Technology of Advanced Materials

487

187

View full text Add to dashboard Cite

Monolayer graphene exhibits extraordinary properties owing to the unique, regular arrangement of atoms in it. However, graphene is usually modified for specific applications, which introduces disorder. This article presents details of graphene structure, including sp2 hybridization, critical parameters of the unit cell, formation of σ and π bonds, electronic band structure, edge orientations, and the number and stacking order of graphene layers. We also discuss topics related to the creation and configuration of disorders in graphene, such as corrugations, topological defects, vacancies, adatoms and sp3-defects. The effects of these disorders on the electrical, thermal, chemical and mechanical properties of graphene are analyzed subsequently. Finally, we review previous work on the modulation of structural defects in graphene for specific applications.

show abstract

Section: The Structure Of Graphenementioning

confidence: 99%

Structure of graphene and its disorders: a review

Gao

Lee

et al. 2018

Science and Technology of Advanced Materials

487

187

View full text Add to dashboard Cite

show abstract

“…[16][17][18] However, it has also been appreciated that it might be possible to purposely design defective structures with a view toward creating certain functionalities. 17,19 Among the possible advantages that the presence of defects in graphene can confer, it has been shown that they can induce magnetic moments, [20][21][22][23][24][25] and improve gas sensing properties. 26 It has also been suggested that the introduction of defects can be used for band-gap engineering.…”

Section: -6mentioning

confidence: 99%

“…26 It has also been suggested that the introduction of defects can be used for band-gap engineering. 17,27,28 Defects can be deliberately created by, e.g., irradiation with electrons [29][30][31][32] or ions, [33][34][35][36] oxidation, 37 hydrogenation, [38][39][40][41] or fluorination.…”

Section: -6mentioning

confidence: 99%

Point defects in twisted bilayer graphene: A density functional theory study

Ulman

Narasimhan

2014

Phys. Rev. B

View full text Add to dashboard Cite

We have used ab initio density functional theory, incorporating van der Waals corrections, to study twisted bilayer graphene (TBLG) where Stone-Wales defects or monovacancies are introduced in one of the layers. We compare these results to those for defects in single layer graphene or Bernal stacked graphene. The energetics of defect formation is not very sensitive to the stacking of the layers or the specific site at which the defect is created, suggesting a weak interlayer coupling. However signatures of the interlayer coupling are manifested clearly in the electronic band structure. For the "γγ" Stone Wales defect in TBLG, we observe two Dirac cones that are shifted in both momentum space and energy. This up/down shift in energy results from the combined effect of a charge transfer between the two graphene layers, and a chemical interaction between the layers, which mimics the effects of a transverse electric field. Charge density plots show that states near the Dirac points have significant admixture between the two layers. For Stone Wales defects at other sites in TBLG, this basic structure is modified by the creation of mini gaps at energy crossings. For a monovacancy, the Dirac cone of the pristine layer is shifted up in energy by ∼ 0.25 eV due to a combination of the requirements of the equilibration of Fermi energy between the two layers with different numbers of electrons, charge transfer, and chemical interactions. Both kinds of defects increase the density of states at the Fermi level. The monovacancy also results in spin polarization, with magnetic moments on the defect of 1.2 -1.8 µB.PACS numbers: 73.22. Pr, 71.15.Mb

show abstract

“…[1][2][3][4] In particular, its unique combination of superlative mechanical 5 and electronic properties [6][7][8] makes it a promising candidate for electronic applications. 2,6,7,9,10 Since electronic devices require carefully defined geometries, graphene is inevitably subjected to lithographic pattering and etching during fabrication.…”

Section: Manuscriptmentioning

confidence: 99%

Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis

Prado

Jariwala²,

Marks

et al. 2013

Applied Physics Letters

View full text Add to dashboard Cite

Single-layer graphene structures and devices are commonly defined using reactive ion etching and plasma etching with O 2 or Ar as the gaseous etchants. Although optical microscopy and Raman spectroscopy are widely used to determine the appropriate duration of dry etching, additional characterization with atomic force microscopy (AFM) reveals that residual graphene and/or etching byproducts persist beyond the point where the aforementioned methods suggest complete graphene etching. Recognizing that incomplete etching may have deleterious effects on devices and/or downstream processing, AFM characterization is used here to determine optimal etching conditions that eliminate graphene dry etching residues.

show abstract

Engineering the Electronic Structure of Graphene

Cited by 154 publications

References 188 publications

Structure of graphene and its disorders: a review

Structure of graphene and its disorders: a review

Point defects in twisted bilayer graphene: A density functional theory study

Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis

Contact Info

Product

Resources

About