Abstract:We have used ab initio density functional theory, incorporating van der Waals corrections, to study twisted bilayer graphene (TBLG) where Stone-Wales defects or monovacancies are introduced in one of the layers. We compare these results to those for defects in single layer graphene or Bernal stacked graphene. The energetics of defect formation is not very sensitive to the stacking of the layers or the specific site at which the defect is created, suggesting a weak interlayer coupling. However signatures of the… Show more
“…The defective formation energy E defect f was calculated as follows where E pristine and E defect are the total energies of pristine BLG and defective BLG, respectively; μ C is the chemical potential of carbon and taken as the total energy per carbon atom of pristine graphene. E defect f of the MV defects is 8.042 eV per carbon atom shown in Table 4, which is well agreed with the previous studies (7.42-8.05 eV) [27,28,60]. cutting through the diagonal of the 3 × 3 supercell with Na atom are shown in the right side of a-f, where the red and the blue regions correspond to accumulation (0.02 e/Å 3 or more) and depletion (−0.02 e/ Å 3 or less), respectively.…”
Section: Effect Of Defects On Na Storagesupporting
confidence: 89%
“…cutting through the diagonal of the 3 × 3 supercell with Na atom are shown in the right side of a-f, where the red and the blue regions correspond to accumulation (0.02 e/Å 3 or more) and depletion (−0.02 e/ Å 3 or less), respectively. Gray and purple circles represent C and Na atoms, respectively Table 4 Defective formation energy E defect f and average interlayer distance (D g-g ) for the BLG with MV defects a LDA, M06-L, vdW-DF implemented in the CASTEP [60] b DFT-D2 implemented in the QUANTUM ESPRESSO [28] c LDA implemented in the CASTEP [ The ∆E f of intercalation/adsorption of Na atoms at inequivalent hollow sites around the point defect regions are shown in Fig. 6a-c.…”
Section: Effect Of Defects On Na Storagementioning
confidence: 99%
“…Bilayer graphene (BLG) as a gapless semiconductor is similar to the monolayer and has widespread potential applications in various fields [24]. However, the BLG has drawn special attention mainly due to the controlled band gap and the magnetic properties from twisting, lattice vacancies and doping/inserting N, B and metal atoms [25][26][27][28][29][30]. BLG was expected to be a good candidate of anode material for LIB, and the Li ions in BLG were surrounded by two exterior graphene layers [31][32][33].…”
“…The defective formation energy E defect f was calculated as follows where E pristine and E defect are the total energies of pristine BLG and defective BLG, respectively; μ C is the chemical potential of carbon and taken as the total energy per carbon atom of pristine graphene. E defect f of the MV defects is 8.042 eV per carbon atom shown in Table 4, which is well agreed with the previous studies (7.42-8.05 eV) [27,28,60]. cutting through the diagonal of the 3 × 3 supercell with Na atom are shown in the right side of a-f, where the red and the blue regions correspond to accumulation (0.02 e/Å 3 or more) and depletion (−0.02 e/ Å 3 or less), respectively.…”
Section: Effect Of Defects On Na Storagesupporting
confidence: 89%
“…cutting through the diagonal of the 3 × 3 supercell with Na atom are shown in the right side of a-f, where the red and the blue regions correspond to accumulation (0.02 e/Å 3 or more) and depletion (−0.02 e/ Å 3 or less), respectively. Gray and purple circles represent C and Na atoms, respectively Table 4 Defective formation energy E defect f and average interlayer distance (D g-g ) for the BLG with MV defects a LDA, M06-L, vdW-DF implemented in the CASTEP [60] b DFT-D2 implemented in the QUANTUM ESPRESSO [28] c LDA implemented in the CASTEP [ The ∆E f of intercalation/adsorption of Na atoms at inequivalent hollow sites around the point defect regions are shown in Fig. 6a-c.…”
Section: Effect Of Defects On Na Storagementioning
confidence: 99%
“…Bilayer graphene (BLG) as a gapless semiconductor is similar to the monolayer and has widespread potential applications in various fields [24]. However, the BLG has drawn special attention mainly due to the controlled band gap and the magnetic properties from twisting, lattice vacancies and doping/inserting N, B and metal atoms [25][26][27][28][29][30]. BLG was expected to be a good candidate of anode material for LIB, and the Li ions in BLG were surrounded by two exterior graphene layers [31][32][33].…”
This article reviews the theoretical and experimental work related to the electronic properties of bilayer graphene systems. Three types of bilayer stackings are discussed: the AA, AB, and twisted bilayer graphene. This review covers single-electron properties, effects of static electric and magnetic fields, bilayer-based mesoscopic systems, spin-orbit coupling, dc transport and optical response, as well as spontaneous symmetry violation and other interaction effects. The selection of the material aims to introduce the reader to the most commonly studied topics of theoretical and experimental research in bilayer graphene.
“…As defects are introduced in one or both layers of TBG, the atomic and electronic structures of http://dx.doi.org/10.1016/j.carbon.2015.05.076 0008-6223/Ó 2015 Elsevier Ltd. All rights reserved. each layer, and of the coupled system, are altered [24]. As a result, an improved understanding of the Raman spectra of defective TBG is necessary to facilitate the study of defective or chemically-modified TBG and to extend earlier studies of ion irradiated graphene [19,25] and carbon nanotubes [26,27].…”
A B S T R A C TLayered two-dimensional crystal systems can exhibit complex interlayer interactions, which are influenced by local crystal structure and/or electronic variations. Here, we study the influence of defects in twisted bilayer graphene (TBG) using Raman spectroscopy. We explore the varied influence of defects on three characteristic Raman modes of both fully-defected TBG, with defects introduced in both layers, and half-defected TBG, with defects introduced in only a single layer. The resonance condition responsible for a strong enhancement of the G peak is sensitive to structural disorder and is quenched within a radius $3 nm of defects, while the twist-angle dependence of the 2D peak is influenced only at the site of structural disorder ($1 nm radius).
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