Gap filling with PVD processes for copper metallized integrated circuits

Wenzel, Christian; Urbansky, N.; Klimes, W; Siemroth, P.; Schulke, T.

doi:10.1016/s0167-9317(96)00028-7

Cited by 10 publications

(3 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus Cu interconnects, combined with low- k materials, offer better chip performance, higher reliability, and lower power consumption compared to Al interconnects in silicon-based semiconductors. − Current Cu film deposition technologies are either vacuum-based methods such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), − or solution-based methods such as electroless deposition and electrodeposition. − Although highly pure Cu films can be deposited, Cu PVD is often considered to be unsuitable for Cu damascene process. This is because Cu PVD often results in poor gap filling and conformity and creation of a void when depositing high-aspect-ratio features . Utilization of Cu CVD in industry is limited by the requirement of high volatility of organocopper compounds, high deposition temperature (>200 °C), possible incorporation of impurities into the film, complexity of CVD processes, and high tool cost.…”

Section: Introductionmentioning

confidence: 99%

Deposition of Copper Particles and Films by the Displacement of Two Immiscible Supercritical Phases and Subsequent Reaction

et al. 2009

View full text Add to dashboard Cite

Copper (Cu) particles and films were produced by forming Cu(II) compound (Cu(hfac) 2 • H 2 O) films on substrates using a displacement from two immiscible supercritical phases (DISP) technique followed by reducing the copper(II) compound films in hydrogen at 200 °C. Various surfaces including native oxide of silicon (SiO x ), titanium nitride (TiN), tungsten (W), and low-k dielectric materials such as Coral, JSR5109, and Silox were used as substrates. The nucleation and growth behavior of the Cu DISP process was evaluated over a range of reduction times (from 5 to 60 min) and copper(II) compound concentrations (0.5-3 wt %). At short reduction periods (5-15 min) or low Cu(II) compound concentrations (∼ 0.5 wt %), Cu particles ranging from 60 to 95 nm in diameter were produced. In contrast, at long reduction periods (45-60 min) and high concentrations (∼3 wt %), continuous Cu films with 220-450 nm in thickness were deposited on the substrates. A morphology transition from particle to film was observed at medium reduction period (∼30 min) or medium concentration range (∼1 wt %). High affinity of TiN to Cu nucleation and film formation leads to more dense and smooth films than Cu films deposited under similar conditions on SiO x . However, nucleation of Cu DISP is not very sensitive to the surface conditions of the substrates compared with Cu CVD (chemical vapor deposition). Chemical composition analysis of the Cu film on TiN and SiO x by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) revealed that highly pure Cu films were obtained from Cu DISP.

show abstract

Section: Introductionmentioning

confidence: 99%

Deposition of Copper Particles and Films by the Displacement of Two Immiscible Supercritical Phases and Subsequent Reaction

et al. 2009

View full text Add to dashboard Cite

show abstract

“…For conventional silicon integrated circuit technology, as the integration level is increased, the resulting reduced feature sizes require the ability to fill the interconnect metal into high aspect ratio holes, generally about 10:1. 5 Both chemical vapor deposition 6-8 ͑CVD͒ and physical vapor deposition 9 have been used successfully for this application. Researchers are also applying atomic layer deposition systems for the conformal coating of sub-100-nm level high aspect ratio structures which have shown a filling of about 40:1 aspect ratio.…”

Section: Introductionmentioning

confidence: 99%

Conformal filling of silicon micropillar platform with b10oron

Deo

Brewer

Reinhardt

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

A recently proposed micropillar semiconductor platform filled with a high volume of isotopic b10oron (B10) has great potential to yield efficient thermal neutron detectors because B10 has a high thermal neutron cross section. Here, the authors report the development of conformal filling of high aspect ratio silicon micropillar platforms with B10 by low pressure chemical vapor deposition (LPCVD) using B10-enriched decaborane (B10H14). The relationships between the pillar structure and the key process parameters including reaction temperature, process pressure, and buffer gas flow rates were investigated to optimize the conformal filling on these structures. Reaction temperature of 420–530 °C, process pressure of 50–450 mTorr, 0.3 SCCM (SCCM denotes cubic centimeter per minute at STP) B10H14 flow rate, and argon buffer gas flow rate of 0–200 SCCM were used to deposit B10 materials into the micropillar structures with aspect ratios of 3:1, 6:1, and 10:1. All three mentioned pillar structures were found to be completely (∼100%) filled with B10 at 420 °C and 50 mTorr. At higher process temperatures, the fill factors of the three pillar structures decreased significantly. The effect of reaction temperature, process pressure, and buffer gas flow rates on the LPCVD deposition mechanism with respect to the structure geometry are also discussed.

show abstract

“…1 Therefore, there continues to be a growing need for conformal coating in the microelectronics industry. In the area of microelectronics, a search is underway to find a reliable technique for filling trenches and vias using copper-metallization technology.…”

Section: Introductionmentioning

confidence: 99%

Conformal metal thin-film coatings in high-aspect-ratio trenches using a self-sputtered rf-driven plasma source

Kim

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

A thin-film coating system has been developed for the deposition of both conductive and insulating materials. The system employs a radio-frequency (rf)-discharge plasma source with four straight rf antennas, which is made of or covered with the deposition material, thus serving simultaneously as a sputtering target. The average deposition rate of the copper thin film can be as high as 500nm∕min when operated under continuous-wave mode. Film properties under different operating conditions (gas pressure and rf power) have been investigated experimentally. Three thin-film coating schemes have been developed, one of which has been demonstrated to be suitable for conformal deep-trench coating. Conformal coating over trenches of high-aspect ratio (>6:1) has been demonstrated at both micron and submicron scales.

show abstract

Gap filling with PVD processes for copper metallized integrated circuits

Cited by 10 publications

References 3 publications

Deposition of Copper Particles and Films by the Displacement of Two Immiscible Supercritical Phases and Subsequent Reaction

Deposition of Copper Particles and Films by the Displacement of Two Immiscible Supercritical Phases and Subsequent Reaction

Conformal filling of silicon micropillar platform with b10oron

Conformal metal thin-film coatings in high-aspect-ratio trenches using a self-sputtered rf-driven plasma source

Contact Info

Product

Resources

About