Gap Fill Materials Using Cyclodextrin Derivatives in ArF Lithography

Abstract

We determine the geometry of supersymmetric heterotic string backgrounds for which all parallel spinors with respect to the connection∇ with torsion H, the NS⊗NS three-form field strength, are Killing. We find that there are two classes of such backgrounds, the null and the timelike. The Killing spinors of the null backgrounds have stability subgroups K R 8 in Spin(9, 1), for K = Spin(7), SU (4), Sp(2), SU (2) × SU (2) and {1}, and the Killing spinors of the timelike backgrounds have stability subgroups G 2 , SU (3), SU (2) and {1}. The former admit a single null∇-parallel vector field while the latter admit a timelike and two, three, five and nine spacelike∇-parallel vector fields, respectively. The spacetime of the null backgrounds is a Lorentzian two-parameter family of Riemannian manifolds B with skew-symmetric torsion. If the rotation of the null vector field vanishes, the holonomy of the connection with torsion of B is contained in K. The spacetime of time-like backgrounds is a principal bundle P with fibre a Lorentzian Lie group and base space a suitable Riemannian manifold with skew-symmetric torsion. The principal bundle is equipped with a connection λ which determines the non-horizontal part of the spacetime metric and of H. The curvature of λ takes values in an appropriate Lie algebra constructed from that of K. In addition dH has only horizontal components and contains the Pontrjagin class of P . We have computed in all cases the Killing spinor bilinears, expressed the fluxes in terms of the geometry and determine the field equations that are implied by the Killing spinor equations.

Step and Flash Nano Imprint Lithography of 80 nm Dense Line Pattern Using Trehalose Derivative Resist Material

“…A stripping test result of less than 10 nm was considered acceptable. [17][18][19][20] The stripping test showed no detectable changes (less than 1.0 nm) in 300 nm film thickness of NCI-NIL-R01 and 100 nm film thickness of NCI-NIL-U01, indicating that NCI-NIL-R01 and NCI-NIL-U01 do not interact significantly. It was obvious that these materials were crosslinked in terms of resistance.…”

Resist Poisoning Studies of Gap Fill Materials for Patterning Metal Trenches in Via-First Dual Damascene Process

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Thermal nanoimprint lithography of sodium hyaluronate solutions with gas permeable inorganic hybrid mold for cosmetic and pharmaceutical applications

“…6,7) Recently, nanoimprint lithography is projected to be used in life science fields such as biosensors, 8,9) cell culture scaffolds, 10,11) and microneedles. 12,13) Compared with lithography techniques that require large and expensive equipment with facilities, such as photolithography, 14,15) extreme ultraviolet lithography, 16,17) electron beam lithography, 18,19) and ion beam methods, 20,21) the nanoimprint lithography of simple molding processes is a low-cost and high-productivity technology that can be applied to various transferred function materials, large areas, and pattern transfer with high aspect ratio and resolution. [22][23][24][25] However, the high viscosity of the imprint materials makes fabrication difficult because gas microbubbles are easily trapped in the gas-impermeable molds.…”