GaN thin films produced by pulsed laser deposition

Cole, Daniel P.; Lunney, J. G.; Logue, F. P.; Donegan, John F.; Coey, J. M. D.

doi:10.1016/s0921-5107(97)00029-9

Cited by 12 publications

(3 citation statements)

References 19 publications

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“…As determined by a linear fit of the squared absorption coefficient as a function of the photon energy near the band gap for a direct band gap semiconductor, the band gap was found to be 3 .4 eV, which is consistent with the most reported value for GaN films [3,5,15].…”

Section: Resultssupporting

confidence: 84%

“…The spectrum seems to be composed of several components from which the band edge transition could not be clearly resolved. For our sample, an interesting feature to be noticed is that no yellow band could be observed in the visible region that is usually associated with crystal defects [3,4,16,17]. Only very weak PL could be observed at room temperature.…”

Section: Resultsmentioning

confidence: 70%

“…PLD is also attractive because it allows for reactive deposition by simply performing in an active gaseous environment [2]. Therefore, PLD has been employed for the growth of GaN thin films either from a GaN pellet in vacuum [3], in NH3 or N2 background [4], or from a metallic gallium target in gaseous nitrogen-containing environment [5,6]. Very recently, we have demonstrated a novel technique based on reactive PLD process for the growth of silicon nitride and other nitride films at low temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Gallium nitride films synthesized by reactive pulsed laser deposition from a GaAs target

Sun

Líu

et al. 2002

SPIE Proceedings

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We demonstrated the feasibility of the growth of GaN thin films from polycrystalline GaAs using reactive pulsed laser deposition. The films were grown on Si (1 00) substrates at temperatures lower than 80 °C. A bulk of polycrystalline GaAs was used as target. Reactive nitrogen plasma was provided by electron cyclotron resonance (ECR) microwave discharge in pure nitrogen gas to assist the film growth. Composition analysis showed that the grown films are slightly N-rich, and arsenic can hardly be detected. A strong absorption peak corresponding to Ga-N stretching vibration in the hexagonaltype GaN crystals is clearly resolved from the JR absorption spectrum. The films exhibit transparency in the visible and near-JR regions. The band gap of the films was determined to be about 3.4 eV. When excited by 325-nm light at 10.2 K, the grown films luminesce in the blue region.

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Section: Resultssupporting

confidence: 84%