GaN/SiC avalanche photodiodes

Zhou, Qiugui; McIntosh, Dion; Lu, Zhiwen; Campbell, Joe C.; Sampath, Anand V.; Shen, H.; Wraback, Michael

doi:10.1063/1.3636412

Cited by 33 publications

(9 citation statements)

References 13 publications

(7 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When the detection spectral range enters the UV region, we need to utilize wide band gap materials as the absorption layer. Therefore, 4H-SiC [ 14 , 15 , 16 , 17 , 18 , 19 ], GaN [ 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 ]-based UV APDs have been demonstrated and investigated in recent years. ZnO is also an attractive wide band gap semiconductor that has a lot of advantages such as high exciton binding energy, direct band gap, low cost, ease of fabrication, and environmental friendliness [ 28 , 29 , 30 ].…”

Section: Introductionmentioning

confidence: 99%

Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode

Zhao

Jia

et al. 2020

Micromachines

View full text Add to dashboard Cite

The avalanche photodiode is a highly sensitive photon detector with wide applications in optical communication and single photon detection. ZnO is a promising wide band gap material to realize a UV avalanche photodiode (APD). However, the lack of p-type doping, the strong self-compensation effect, and the scarcity of data on the ionization coefficients restrain the development and application of ZnO APD. Furthermore, ZnO APD has been seldom reported before. In this work, we employed a p-Si/i-ZnO/n-AZO structure to successfully realize electron avalanche multiplication. Based on this structure, we investigated the band structure, field profile, Current–Voltage (I-V) characteristics, and avalanche gain. To examine the influence of the width of the i-ZnO layer on the performance, we changed the i-ZnO layer thickness to 250, 500, and 750 nm. The measured breakdown voltages agree well with the corresponding threshold electric field strengths that we calculated. The agreement between the experimental data and calculated results supports our analysis. Finally, we provide data on the impact ionization coefficients of electrons for ZnO along the (001) direction, which is of great significance in designing high-performance low excess noise ZnO APD. Our work lays a foundation to realize a high-performance ZnO-based avalanche device.

show abstract

Section: Introductionmentioning

confidence: 99%

Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode

Zhao

Jia

et al. 2020

Micromachines

View full text Add to dashboard Cite

show abstract

“…The formation of a small (~7 ° ) SiC sidewall bevel structure is favoured to prevent such a premature edge breakdown 3 . Small-angle bevel structures (from 7 ° to 15 ° , in particular) are achieved using Cl 2 /O 2 gas chemistry, which has been found in miniature, highly reliable, low power consumption, SiC-based APDs.…”

Section: Introductionmentioning

confidence: 99%

“…Small-angle bevel often encounters problems with early edge breakdown, as a locally enhanced electric field occurs on the etched junction surface at the active region of APDs during the mesa etching 27 . The formation of a small (~7 ° ) SiC sidewall bevel structure is favoured to prevent such a premature edge breakdown 3 . Small-angle bevel structures (from 7 ° to 15 ° , in particular) are achieved using Cl 2 /O 2 gas chemistry, which has been found in miniature, highly reliable, low power consumption, SiC-based APDs.…”

Section: Introductionmentioning

confidence: 99%

Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

Sung

Qiang

Yao

et al. 2017

Sci Rep

View full text Add to dashboard Cite

This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications. Applying different gas mixtures, a maximum bevel angle of 87° (almost vertical), large-angle bevels ranging from 40° to 80°, and small-angel bevels ranging from 7° to 17° were achieved separately using distinct gas mixtures at different ratios. We found that SF6 with additive O2 was effective for vertical etching, with a best etching rate of 3050 Å/min. As for the large-angle bevel structures, BCl3 + N2 gas mixtures show better characteristics, exhibiting a controllable and large etching angle range from 40° to 80° through the adjustment of the mixture ratio. Additionally, a Cl2 + O2 mixture at different ratios is applied to achieve a small-angel bevels ranging from 7° to 17°. A minimum bevel angel of approximately 7° was achieved under the specific volume of 2.4 sccm Cl2 and 3.6 sccm O2. These results can be used to improve performance in various microelectronic applications including MMIC via holes, PIN diodes, Schottky diodes, JFETs’ bevel mesa, and avalanche photodiode fabrication.

show abstract

“…Growth of AlGaN material for high gain ultraviolet avalanche photodiode (UV-APD) arrays has traditionally been restricted to the use of lattice-mismatched substrates such as SiC and sapphire due to the lack of availability of native III-N substrates [5]. However, the lattice mismatch and differences in the thermal expansion coefficients between such foreign substrates can lead to strain-induced defects, resulting in high leakage current and premature microplasma breakdown prior to reaching avalanche breakdown [6].…”

Section: Introductionmentioning

confidence: 99%

High performance GaN/AlGaN ultraviolet avalanche photodiode detector technologies

Sood

Zeller

Ghuman

et al. 2019

Image Sensing Technologies: Materials, Devices, Systems, and Applications VI

View full text Add to dashboard Cite

Detection of ultraviolet (UV) bands provides distinct advantages for NASA, defense, and commercial applications, including increased spatial resolution, small pixel sizes, and large format arrays. AlxGa1-xN semiconductor alloys have attracted great interest for detection in the UV spectral region because of their potential for high optical gain, high sensitivity, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs that demonstrate consistent and reliable UV-APD performance and operation. For these UV detectors we have measured gains of above 5×10 6 and high quantum efficiencies at ~350 nm enabled by a strong avalanche multiplication process. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized GaN/AlGaN UV-APD material growth and doping parameters. The high performance, variable-area GaN/AlGaN UV-APD detectors and arrays can be customized to a wide variety of sizes including large-area formats to enable sensing and high-resolution detection over UV bands of interest.

show abstract

GaN/SiC avalanche photodiodes

Cited by 33 publications

References 13 publications

Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode

Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode

Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

High performance GaN/AlGaN ultraviolet avalanche photodiode detector technologies

Contact Info

Product

Resources

About