GaN quantum-dots integrated in the gate dielectric of metal-oxide-semiconductor structures for charge-storage applications

Dimitrakis, P.; Normand, P.; Bonafos, Caroline; Papadomanolaki, E.; Iliopoulos, E.

doi:10.1063/1.4790439

Cited by 14 publications

(11 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Transmission‐electron‐microscopy (TEM) investigations revealed the presence of crystalline GaN QDs and the variation of their characteristics with respect to the MBD conditions . The variation of the number of MLs allowed tuning the size/density of QDs from discrete 3.5 nm in diameter up to poly‐crystalline GaN layer.…”

Section: Methodsmentioning

confidence: 99%

“…In this work we address the development of group IV and III‐N QDs embedded into very thin insulators with focus on their application to NVM devices. More specifically, we report on 2D arrays of Si and GaN QDs in SiO 2 formed by ultra‐low‐energy IBS (ULE‐IBS) and molecular beam deposition (MBD) , respectively. A review on the fabrication of Si and Ge QDs by ULE‐IBS in different insulators has recently been published by Bonafos et al .…”

Section: Introductionmentioning

confidence: 99%

“…This can be achieved by forming semiconductor QDs which exhibit negative conduction band offset with respect to the substrate. Assuming a Si substrate with a thin SiO 2 tunneling layer, GaN QDs fulfill these requirements . As stressed herein the MBD technique is well adapted for making GaN QDs onto amorphous dielectrics with negligible cross‐contamination effects under specific process conditions.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Quantum dots for memory applications

Dimitrakis

Normand

Ioannou‐Sougleridis

et al. 2013

Phys. Status Solidi A

Self Cite

View full text Add to dashboard Cite

In this paper, we review the fabrication and the electrical characteristics of metal-insulator-semiconductor (MIS) devices with semiconductor quantum dots (QD) embedded into the gate dielectric. Our results originate from experiments performed the last decade and cover Si QDs realized by low-energy ion-beam synthesis (IBS) as well as GaN QDs formed by molecular beam deposition (MBD). Besides the basic capacitance-to-voltage (C-V) and current-to-voltage (I-V) characterization, the memory properties of the fabricated MIS devices were investigated in terms of memory window under pulse operation and charge retention. The optimization of Si-QD memory cells is reviewed and a methodology for both the extraction of various device parameters and the identification of mechanisms governing the charge loss process are presented. GaN QDs, which exhibit negative conduction band-offset with respect to the Si conduction band, offer an interesting alternative to Si QDs as discussed herein based on our investigations of GaN-QD capacitors fabricated by a complementary-metal-oxide-semiconductor (CMOS) compatible process.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Quantum dots for memory applications

Dimitrakis

Normand

Ioannou‐Sougleridis

et al. 2013

Phys. Status Solidi A

Self Cite

View full text Add to dashboard Cite

show abstract

“…2 Silicon nanocrystal process Nanocrystals for memory storage can be formed in a number of ways, including deposition/self-assembly [12], ion implantation [13], chemical reaction of multi-layers [14], and aerosol or spin-on delivery [15]. A wide range of materials can be used in the nanocrystal formation process, including semiconductors and metals [16,17], making for an active field of research. However, silicon nanocrystals represent the simplest replacement of polysilicon floating gate memory, with ready introduction into a platform CMOS flow, and are utilized in our embedded flash.…”

mentioning

confidence: 99%

Implementation of Si nanocrystals in non-volatile memory devices

Yater¹

2013

Phys. Status Solidi A

View full text Add to dashboard Cite

Growth in the demand for flash non-volatile memory (NVM) has been driven by mass storage applications, as well as mobile and consumer electronics. Embedded flash is utilized in microcontrollers where system speed, security, and customization are important. The challenges of embedded flash memories, usable across a range of products from consumer to automotive, include the ability to store and update data over a wide range of temperature and voltage corners. Nanocrystal memory is of great interest because of its improved reliability due to the localized nature of the charge storage, as well as its process simplicity and ease of integration into the complementary metal-oxide-semiconductor (CMOS) platform. Additionally, scaling of the dielectric thickness allows for reduced operating voltages and module size. Nanocrystal deposition techniques have been developed to produce uniform, controllable films, and device performance is well-behaved. The first commercially available microcontroller family built with silicon nanocrystals as the storage medium is now in production, built on a 90 nm platform and using a split-gate architecture. In this work, device and materials issues related to silicon nanocrystal memory are reviewed, and memory array performance discussed. Finally, scalability of nanocrystal memories is considered, where excellent performance and reliability can be achieved down to the 40 nm technology node and further.

show abstract

“…Of the alternatives, nanocrystallite (NC)-based charge trap memory (CTM) devices have received much attention in the electronics industry because of their advantages such as lower operation voltage, higher endurance, and simple fabrication process compatible with standard complementary metal oxide semiconductor (CMOS) technology [6][7][8][9]. Numerous works have focused on developing charge trapping layers containing metallic or semiconducting NCs for use in nonvolatile memory devices [10][11][12][13][14][15][16][17]. However, researchers have been challenged by the poor thermal stability as well as the incompatibility with the metal oxide semiconductor (MOS) process of metallic or semiconducting NC memory devices [18,19].…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing Atmosphere on the La₂O₃Nanocrystallite Based Charge Trap Memory

Tang¹,

Zhao²,

Hu³

et al. 2014

Transactions on Electrical and Electronic Materials

View full text Add to dashboard Cite

charge trap memory capacitors were prepared, in which the La 2 Si 5 O x film was used as the charge trapping layer, and the effects of post annealing atmospheres (NH 3 and N 2 ) on their memory characteristics were investigated. La 2 O 3 nanocrystallites, as the storage nodes, precipitated from the amorphous La 2 Si 5 O x film during rapid thermal annealing. The NH 3 annealed memory capacitor showed higher charge storage performances than either the capacitor without annealing or the capacitor annealed in N 2 . The memory characteristics were enhanced because more nitrogen was incorporated at the La 2 Si 5 O x /SiO 2 interface and interfacial reaction was suppressed after the NH 3 annealing treatment.

show abstract

GaN quantum-dots integrated in the gate dielectric of metal-oxide-semiconductor structures for charge-storage applications

Cited by 14 publications

References 19 publications

Quantum dots for memory applications

Quantum dots for memory applications

Implementation of Si nanocrystals in non-volatile memory devices

Effect of Annealing Atmosphere on the La₂O₃Nanocrystallite Based Charge Trap Memory

Contact Info

Product

Resources

About

GaN quantum-dots integrated in the gate dielectric of metal-oxide-semiconductor structures for charge-storage applications

Cited by 14 publications

References 19 publications

Quantum dots for memory applications

Quantum dots for memory applications

Implementation of Si nanocrystals in non-volatile memory devices

Effect of Annealing Atmosphere on the La2O3Nanocrystallite Based Charge Trap Memory

Contact Info

Product

Resources

About

Effect of Annealing Atmosphere on the La₂O₃Nanocrystallite Based Charge Trap Memory