Effect of Annealing Atmosphere on the La₂O₃Nanocrystallite Based Charge Trap Memory

Abstract

charge trap memory capacitors were prepared, in which the La 2 Si 5 O x film was used as the charge trapping layer, and the effects of post annealing atmospheres (NH 3 and N 2 ) on their memory characteristics were investigated. La 2 O 3 nanocrystallites, as the storage nodes, precipitated from the amorphous La 2 Si 5 O x film during rapid thermal annealing. The NH 3 annealed memory capacitor showed higher charge storage performances than either the capacitor without annealing or the capacitor annealed in N 2 . The memory characteristics were enhanced because more nitrogen was incorporated at the La 2 Si 5 O x /SiO 2 interface and interfacial reaction was suppressed after the NH 3 annealing treatment.