GaN-on-Si Power Technology: Devices and Applications

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

“…The latter concept exists in two variants: the p-GaN gate injection transistor used by Panasonic and Infineon operates with an ohmic contact to the p-GaN gate. It requires a low bipolar current to clamp the gate to a positive forward bias during the on-state of the transistor, but has the unique advantage, that it can tolerate several amperes of forward current thus limiting effectively any voltage spikes on the gate [12]. The second variant of the p-GaN gate concept operates with a Schottky contact to the gate, which yields a low gate current but has issues with a high susceptibility to gate rupture through voltage spikes.…”

A Review on Power MOSFET Device Structures

“…The ideal R on of vertical GaN device is 1.78 times smaller as that of SiC device and 2130 times smaller than of Si [12]. The GaN on Si show better performance in R on , switching speed, thermal performance, chip size and cost [25]. Fig 10 shows ©IJRASET (UGC Approved Journal): All Rights are Reserved Fig.…”

Hybrid small‐signal model parameter extraction of GaN HEMTs on Si and SiC substrates based on global optimization

“…GaN on silicon (Si) substrate is becoming an attractive cost‐effective solution to rapidly integrate GaN HEMTs in the well‐established Si fabrication processes . The GaN on Si HEMT has extra parasitic leakage currents that may be related to the conduction through the substrate, which has lower resistivity than silicon carbide (SiC) based substrate …”

“…GaN on silicon (Si) substrate is becoming an attractive cost-effective solution to rapidly integrate GaN HEMTs in the well-established Si fabrication processes. 3 The GaN on Si HEMT has extra parasitic leakage currents that may be related to the conduction through the substrate, which has lower resistivity than silicon carbide (SiC) based substrate. [4][5][6][7][8][9] To simulate these effects, Chumbes et al, 4 , and later Manohar et al, 5 and Cabral et al, 6 used extrinsic series RC branches representing the metal/buffer/substrate layers that act as non-ideal (resistive) n-i-p diodes under RF operation.…”