GaN nanowires on diamond

Hetzl, Martin; Schuster, Fabian; Winnerl, Andrea; Weiszer, Saskia; Stutzmann, M.

doi:10.1016/j.mssp.2016.03.013

Cited by 21 publications

(27 citation statements)

References 79 publications

(154 reference statements)

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“…A detailed comparison of bare GaN NWs on both substrates can be found in ref. 19. In contrast to the pronounced intensity quenching for core-shell NWs on Si, the PL intensities of bare GaN NWs and core-shell NWs on diamond are similar to each other ( Fig.…”

Section: Resultsmentioning

confidence: 77%

“…This phenomenon is characteristic for the transition from spontaneous emission to ASE, which has been also observed for pure SAG GaN NWs in a similar excitation regime. 19 In contrast, core-shell NWs on Si show an unaltered FWHM for all excitation powers which is, in addition, on the same level like the FWHM of core-shell NWs on diamond in the case of low excitation densities. Thus, we assume that the PL emission from core-shell NWs on Si is spontaneous emission, whereas its superlinear slope is due to nonradiative defect saturation.…”

Section: Resultsmentioning

confidence: 87%

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Surface passivation and self-regulated shell growth in selective area-grown GaN–(Al,Ga)N core–shell nanowires

et al. 2017

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The large surface-to-volume ratio of GaN nanowires implicates sensitivity of the optical and electrical properties of the nanowires to their surroundings. The implementation of an (Al,Ga)N shell with a larger band gap around the GaN nanowire core is a promising geometry to seal the GaN surface. We investigate the luminescence and structural properties of selective area-grown GaN-(Al,Ga)N core-shell nanowires grown on Si and diamond substrates. While the (Al,Ga)N shell allows a suppression of yellow defect luminescence from the GaN core, an overall intensity loss due to Si-related defects at the GaN/(Al,Ga)N interface has been observed in the case of Si substrates. Scanning transmission electron microscopy measurements indicate a superior crystal quality of the (Al,Ga)N shell along the nanowire side facets compared to the (Al,Ga)N cap at the top facet. A nucleation study of the (Al,Ga)N shell reveals a pronounced bowing of the nanowires along the c-direction after a short deposition time which disappears for longer growth times. This is assigned to an initially inhomogeneous shell nucleation. A detailed study of the proceeding shell growth allows the formulation of a strain-driven self-regulating (Al,Ga)N shell nucleation model.

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Section: Resultsmentioning

confidence: 77%

Section: Resultsmentioning

confidence: 87%

Surface passivation and self-regulated shell growth in selective area-grown GaN–(Al,Ga)N core–shell nanowires

et al. 2017

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“…The GaN nanostructured material has ability to absorb UV radiation and immense in many optical applications [17]. GaN nanostructured have various shapes including nanowires [18], nanoparticles [19], nanobelts [20], nanorings [21], nanotubes [22], nanodots [23], and nanorods [24]. GaN nanoparticles generated lot of interest among scientists as well as technologists during past few years.…”

Section: Gan Nanostructured Materials Dopingmentioning

confidence: 99%

Review of GaN Nanostructured Based Devices

Nahhas¹

2018

AJN

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This paper presents a review of recent advances of GaN based nanostructured materials and devices.GaN has gained substantial interest in the research area of wide band gap semiconductors due to its unique electrical, optical and structural properties. GaN nanostructured material exhibits many advantages for nanodevices due to its higher surface-to-volume ratio as compared to thin films. GaN nanostructured material has the ability to absorb ultraviolet (UV) radiation and immense in many optical applications. Recently, GaN nanostructured based devices have gained much attention due to their various potential applications. GaN as nanomaterial have been used in many devices such as UV photodetectors, light emitting diodes, solar cells and transistors. The recent aspects of GaN based devices are presented and discussed. The performance of several devices structures which has been demonstrated on GaN is reviewed. The structural, electrical, and optical properties are also reviewed.

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“…18 Catalyst-free methods generally utilize selective area growth of preferential growing crystallographic planes over non-preferential planes by altering the processing conditions in order to favor onedimensional material growth. 21 GaN nanostructures have been prepared in variety of forms including nanorods, [22][23][24] nanowires, [25][26][27][28][29][30][31][32][33][34][35] and nanopillars. [36][37][38][39][40] The common material growth methods utilized for preparing these nanostructures are arc discharge, laser ablation, metal organic chemical vapor deposition (MOCVD), and pyrolysis.…”

Section: Introductionmentioning

confidence: 99%

“…[36][37][38][39][40] The common material growth methods utilized for preparing these nanostructures are arc discharge, laser ablation, metal organic chemical vapor deposition (MOCVD), and pyrolysis. [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40] Strong cathode-luminscence and/or photoluminescence from GaN nanopillars has been observed as compared to single crystalline GaN thin films, which is attributed to the high crystal quality, strain/ stress reduction, and improved anti reflection properties of GaN nanopillars. 36,37 AlN nanostructures have been fabricated in the form of nanofibers, 41 nanorods, 42,43 and nanowires, [44][45][46][47] mainly using electrospinning, CVD, and molecular beam epitaxy (MBE) techniques.…”

Section: Introductionmentioning

confidence: 99%