GaN MSM UV Photodetector With Sputtered AlN Nucleation Layer

Wang, Chun-Kai; Chiou, Yu−Zung; Chang, Shoou Jinn; Lai, Wei–Chih; Yen, Chih−Hung; Hung, C.C.

doi:10.1109/jsen.2015.2425657

Cited by 39 publications

(18 citation statements)

References 40 publications

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“…Generally, photodetectors with a lower dark current are more sensitive to the weak light. Adjusting the electrode materials, [ 37,204–206 ] using asymmetric electrodes, [ 207–211 ] introducing a barrier enhancement layer, [ 212–215 ] surface passivation, [ 216–218 ] atom implantation, [ 219,220 ] and atom doping [ 221,222 ] can effectively reduce the dark current of MSM‐PDs.…”

Section: Improving the Performances Of Msm‐pdsmentioning

confidence: 99%

See 1 more Smart Citation

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Shi

Chen

Zhai

et al. 2020

Laser & Photonics Reviews

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Metal–inorganic semiconductor–metal photodetectors (MSM‐PDs) have received great attention in many areas, such as optical fiber communication, sensing, missile guidance, etc., due to their inherent merits of high speed, high sensitivity, and easy integration. This review focuses on MSM‐PDs with the semiconductor layer made of inorganic materials including traditional semiconductors (such as GaAs and Si), the third‐generation wide bandgap semiconductors (such as GaN, ZnO, and SiC), as well as several emerging semiconductors (such as perovskites and 2D materials). First, the basic structures of MSM‐PDs, including the planar and vertical configurations, are presented. Then, their working principles of MSM‐PDs are discussed. Subsequently, the research progresses on MSM‐PDs consisting of different photosensitive semiconductor materials are described in detail. Additionally, the efforts to optimize MSM‐PDs from the aspects of dark current, response speed, responsivity, spectral adjustment, etc., are also introduced. Finally, the review is concluded with the perspectives of MSM‐PDs from the authors’ vision.

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Section: Improving the Performances Of Msm‐pdsmentioning

confidence: 99%

“…Besides, AlN could also function as a nucleation layer for GaN film deposition on the sapphire substrate, facilitating the reduction of threading dislocations of the GaN crystals, thereby effectively suppressing the dark current. [ 206 ]…”

Section: Improving the Performances Of Msm‐pdsmentioning

confidence: 99%

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Shi

Chen

Zhai

et al. 2020

Laser & Photonics Reviews

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“…Although studies have shown that AlGaN-alloy-based Schottky detectors can be grown and prepared on SiC or sapphire substrates [13], p-i-n detectors have excellent performance [14]. However, because the bandgap of AlN is as high as 6.1 eV and has good thermal conductivity, the material advantages in the vacuum ultraviolet and deep ultraviolet fields are very prominent [15,16], actually,it is also employed in photoelectric conversion, the electrode structure directly affects the detector's response time, quantum efficiency, response speed, etc. Therefore, it is necessary to study the effect of dislocations on AlN materials and how to design electrodes with MSM structures to improve the performance of the detector.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of defects and electrode structure on the performance of AlN-based metal semiconductor metal detectors

Li¹,

Wang²,

He³

et al. 2021

Mater. Res. Express

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We used the metal-organic chemical vapor deposition(MOCVD) method to grow AlN material on a c-plane sapphire substrate and fabricate an AlN-based metal-semiconductor-metal (MSM) detector. Analyzing the influence mechanism of different dislocation densities in AlN materials and detector electrode structure on the detector performance, it was found that the lower the dislocations can effectively reduce the dark current of the detector under zero bias voltage, and help improve the performance of the detector. The study also found that when the finger spacing of the detector remained the same and the finger width increased, the efficiency of the detector decreased, while the response time of the detector increased, when the finger width of the detector electrodes remained unchanged and the finger spacing increased, the response time of the detector increased. Therefore, the electrode finger width and finger spacing must be compromised in the design of the electrode structure to improve the performance of the AlN-based MSM detector.

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“…Recently, Li et al [12] obtained the highly preferred (002)‐oriented AlN films by changing the pressure of magnetron sputtering, which has high quality and low stress. Wang et al [13] employed magnetron sputtering method to deposit AlN layer on sapphire substrate as buffer layer in GaN‐based ultraviolet photodetectors, which effectively improved the crystal quality. In addition, the ultraviolet photodetector with sputtered AlN as buffer layer has better electrical and optical properties than ultraviolet photodetectors with in‐situ synthesised AlN layer as buffer layer.…”

Section: Introductionmentioning

confidence: 99%

Influence of nitrogen flow ratio on the optical property of AlN deposited by DC magnetron sputtering on Si (100) substrate

Han

Cui

Xing

et al. 2020

Micro & Nano Letters

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Aluminum nitride (AlN) films were deposited on Si (100) substrate at room temperature in different N 2 flow ratios (N 2 /(N 2 + Ar)) by direct current (DC) magnetron sputtering. AlN films were prepared with the N 2 flow ratios from 20 to 50%. The intensity of X-ray diffraction peak on (002) plane enhanced with the increase of N 2 flow ratio. When the flow ratio of N 2 was 50%, the AlN film tended to be the most preferred orientation of (002) plane with the value of full width half maximum being 0.34°. Optical property was studied by ellipsometer and the refractive index of the samples was between 1.92 and 2.05. According to the Fourier transform infrared spectroscopy, the density of Al-N bonds went up gradually and the tensile stress had a rising trend with the increasing N 2 flow ratio. In short, this work is helpful for the growth of AlN buffer layer deposited on Si (100) substrate.

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GaN MSM UV Photodetector With Sputtered AlN Nucleation Layer

Cited by 39 publications

References 40 publications

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Mechanism of defects and electrode structure on the performance of AlN-based metal semiconductor metal detectors

Influence of nitrogen flow ratio on the optical property of AlN deposited by DC magnetron sputtering on Si (100) substrate

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