GaN layer growth optimization for high power devices

Bar-Ilan, Amnon; Zamir, S.; Katz, Or; Meyler, B.; Salzman, J.

doi:10.1016/s0921-5093(00)01347-2

Cited by 25 publications

(7 citation statements)

References 19 publications

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“…Light-emitting diodes, ultraviolet photoconductive detectors, and diode lasers are a commercial reality due to intense research activity in recent years [1][2][3]. In addition to success in the commercial production of GaN optoelectronic devices, a great effort has also been made to develop GaN-based optoelectronic device applications.…”

Section: Introductionmentioning

confidence: 99%

A comparative DFT study of the structural and electronic properties of nonpolar GaN surfaces

González‐Hernández

González-García

Barragan-Yani

et al. 2014

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

A comparative DFT study of the structural and electronic properties of nonpolar GaN surfaces

González‐Hernández

González-García

Barragan-Yani

et al. 2014

Applied Surface Science

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“…Due to its important characteristics such as wide band gap, high thermal conductivity, high breakdown voltage, high melting point, and chemical stability, among others, GaN and its compounds such as GaN x As 1− x [1–3] have emerged as a new type material for the fabrication of optoelectronic devices in the blue and ultraviolet spectral region [4–10]. Most research has focused on its physical properties, growth mechanisms, and surface structures [11–15].…”

Section: Introductionmentioning

confidence: 99%

Influence of Vacancy Defect on Surface Feature and Adsorption of Cs on GaN(0001) Surface

Wang

2014

The Scientific World Journal

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The effects of Ga and N vacancy defect on the change in surface feature, work function, and characteristic of Cs adsorption on a (2 × 2) GaN(0001) surface have been investigated using density functional theory with a plane-wave ultrasoft pseudopotential method based on first-principles calculations. The covalent bonds gain strength for Ga vacancy defect, whereas they grow weak for N vacancy defect. The lower work function is achieved for Ga and N vacancy defect surfaces than intact surface. The most stable position of Cs adatom on Ga vacancy defect surface is at T1 site, whereas it is at BGa site on N vacancy defect surface. The E ads of Cs on GaN(0001) vacancy defect surface increases compared with that of intact surface; this illustrates that the adsorption of Cs on intact surface is more stable.

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“…This approach has been used in the past to identify interactions in complex processes. 12,13,14,15,16 This paper will outline the results from statistical DOEs on the active region and pAlGaN cladding layer of a multiple quantum well (MQW) LED structure and specifically look at the interactions taking place and how these can be related to kinetic models of the growth of GaN.…”

Section: Introductionmentioning

confidence: 99%

Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD

Grandusky

Jamil

Jindal

et al. 2005

Fifth International Conference on Solid State Lighting

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The growth of violet light emitting diodes (LEDs) was optimized using a statistical design of experiment (DOE) approach and several important interaction effects were found. The DOEs studied the effect of several variables on the well layer, the barrier layer, and the pAlGaN cladding layer. These variables included the gallium flow rate, the indium flow rate, the growth temperature, and the growth time for the well layer, the ammonia flow in the active region, the barrier growth time, and the Si doping of the barrier, as well as the growth time, growth temperature and Mg doping of the pAlGaN cladding layer. The LEDs were optimized based on combinations of several responses from photoluminescence and electroluminescence measurements. An overall process desirability was obtained, based on achieving the desired wavelength and maximizing the PL intensity and optical output power. Significant interactions between variables played a major role in the optimization of optical output power as well the emission wavelength. The understanding of these interactions led to the optimization of the LEDs both by improvements in the structure and improvements in the quality of the layers. Several of the interactions will be explained based on kinetic models of GaN growth by MOCVD.

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GaN layer growth optimization for high power devices

Cited by 25 publications

References 19 publications

A comparative DFT study of the structural and electronic properties of nonpolar GaN surfaces

A comparative DFT study of the structural and electronic properties of nonpolar GaN surfaces

Influence of Vacancy Defect on Surface Feature and Adsorption of Cs on GaN(0001) Surface

Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD

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