GaN HEMT reliability at 125 &amp;#x00B0;C for 1000 hours

Moses, Justin D.; Jenkins, Luke L.; Aggas, Jeff; Abell, Will; Henning, Stephan; Tennant, John; Wilson, Christopher G.; Dean, Robert N.

doi:10.1109/wipda.2013.6695590

Cited by 3 publications

(1 citation statement)

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“…The gate aging can be attributed to the defect/leakage paths in the p-type (AIGaN buffer) gate interface caused by the hot electrons. Several studies have shown that GaN HEMTs operate reliably under junction temperatures of about 150 °C (and no other stress factors), although RDSon slightly increases because of the trapping of hot electrons [19][20][21][22]. Gate degradation in GaN HEMTs results from electrons that accumulate on the surface of the semiconductor due to traps (which can be generated during the OFF state stress voltage [23]) or defect formation in the gate region.…”

Section: Introductionmentioning

confidence: 99%

Characterization of GaN HEMTs' Aging Precursors and Activation Energy Under a Wide Range of Thermal Cycling Tests

Sayed

Kulothungan

Krishnamoorthy

2023

IEEE Open J. Ind. Electron. Soc.

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In this paper, 650 V / 7.5 A rated enhancement-mode (E-mode) Gallium Nitride (GaN) highelectron-mobility-transistors (HEMTs) with integrated gate drivers are characterized under thousands of accelerated thermal cycles (ATC) at different junction temperature stresses. This research helps in developing fundamental insights into GaN HEMTs' aging characteristics through the degradation of ten devices under ATC tests. For over 20,000 thermal cycles, the forward and reverse conduction losses, IGSS, Coss, and the RDSon are experimentally measured to identify the parameter shifts and the corresponding precursors. Results indicate that both IGSS and Coss do not deviate much, but the values of RDSon, the forward and reverse conduction losses vary considerably with device aging. This paper also presents an empirical method to estimate the correlation between the acceleration factors of the GaN FETs' degradation process and the thermal cycling conditions. The value of the activation energy of the tested GaN HEMT devices is also derived using the empirical equations to be about 1.13 eV under the applied stress factors. This study finds that the degradation process of GaN HEMTs with age facilitates a reasonable correlation with different failure mechanisms, which further helps in reliability improvement.

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