GaN HBT: toward an RF device

Abstract-N-p-n Al 0 05 GaN/GaN heterojunction bipolar transistors with a common emitter operation voltage higher than 330 V have been demonstrated using selectively regrown emitters. Devices were grown by metalorganic chemical vapor deposition on sapphire substrates. The n-type emitter was grown selectively on a 100-nm-thick p-base with an 8 m n-collector structure using a dielectric mask. The shallow etch down to the collector mitigates damages induced in the dry etch, resulting a low leakage and a high breakdown. The graded AlGaN emitter results in a common emitter current gain of 18 at an average collector current density of up to 1 kA cm 2 at room temperature.

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“…Using a patterned dielectric mask Al N [8], the graded AlGaN emitter was selectively regrown at 1100 C at a pressure of 300 Torr.…”

Section: Methodsmentioning

confidence: 99%

Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs

Xing

Chavarkar²,

Keller

et al. 2003

IEEE Electron Device Lett.

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“…The growth interrupt after the Mg-doped layer was performed to mitigate any Mg memory effect. 28,29 From the substrate, the heterostructures consisted of a 300 nm Mg-doped GaN layer, [Mg] = 3 9 10 19 cm À3 , followed by a 200 nm not intentionally doped (n.i.d.) GaN buffer layer, and a 20 nm n.i.d.…”

Section: Methodsmentioning

confidence: 99%

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

Grenko

Reynolds

Barlage

et al. 2010

Journal of Elec Materi

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We report on the growth of Al 0.25 Ga 0.75 N/GaN heterostructures grown on low dislocation density vicinal surfaces of semi-insulating c-axis GaN substrates. Atomic force microscopy (AFM), photoluminescence (PL), cathodoluminescence (CL), high-resolution x-ray diffraction (HRXRD), secondary-ion mass spectroscopy (SIMS), Hall effect, and Raman spectroscopy have been used to assess structural and electrical properties as a function of substrate offcut. Bulk GaN substrates with vicinal offcut between 0.5°and 1.4°are optimal with respect to surface roughness and dopant incorporation. AFM, PL, and CL show decreasing Mg incorporation with increasing offcut angle. Raman spectroscopy, used to analyze biaxial strain, confirms essentially strain-free heterostructure growth on vicinal substrates with offcut angles between 0.5°a nd 1.4°off [0001] toward ½1100. Aluminum (Al) incorporation in the Al xGa 1Àx N barrier assessed by Raman vibration is in excellent agreement with trends found by HRXRD.

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“…However, the formation of a p-type base layer is difficult because of the low activation efficiency of p-type doping. For example, as the activation efficiency is around 1.5% in GaN, a doping concentration of approximately 10 19 cm −3 results in a carrier concentration of approximately 10 17 cm −3 [22]. By using InGaN, the efficiency can be improved.…”

Section: Hbtmentioning

confidence: 99%

Recent progress in compound semiconductor electron devices

Miyamoto

2016

IEICE Electron. Express

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Compound semiconductor electronic devices have the capability to provide high-speed operation as they have higher mobility than Si. At present, compound semiconductor devices are popular as parts of consumer electronics such as wireless communication devices or satellite television. Introduction of wide bandgap compound semiconductors has increased the use of compound semiconductor devices in base stations of cellular phone systems and as replacements for vacuum tubes. More recently, the research on InGaAs MOSFET has been directed towards realization of its potential as an alternative for silicon. This review explains the present commercialization of compound semiconductor devices in consumer electronics, and its state-of-art results such as the 529-GHz dynamic frequency divider using InGaAs heterojunction bipolar transistors, the 1-THz amplification provided by the InGaAs highelectron-mobility transistor (HEMT), and the power of 3 Wmm −1 provided by the GaN HEMT at 96 GHz. The InGaAs MOSFET as the next candidate for logic circuit components, is also explained.

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GaN HBT: toward an RF device

Cited by 74 publications

References 18 publications

Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs

Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

Recent progress in compound semiconductor electron devices

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