GaN growth on 150-mm-diameter (111) Si substrates

AlGaN‐based heterostructures grown on 4 inch Si(111) by MOVPE

“…In the literature, GaN layers grown on silicon often show broad asymmetric peaks. The FWHM of the asymmetric (-1102) ω-scan is in the range of 1500-3000 arc sec [17][18][19], which is comparable with the values obtained from our AlGaN samples.…”

Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction

“…In this regard, the reduction of the dislocation density in GaN high electron mobility transistors (HEMT) has become an increasingly important issue [3]. In addition to the dislocation density of the crystals included in the device, the production costs must be greatly reduced in order for such technologies to be adopted by manufacturers [4,5]. Thus, the production of large high-quality GaN single crystal substrates is strongly desired, and the methods for achieving this have been developed [6][7][8][9][10][11][12].…”

Novel approach for III-N on Si (111) templates fabrication by low-temperature PA MBE using porous Si layer

“…Using M GaN =478 GPa [13] and T s =700° the tensile stress can be evaluated as σ th =970 MPa. As described in [14], for films on substrates with different elastic properties, this critical thickness for channeling steady-state propagation parallel to the interface by cracks that extend to the film-substrate interface is given by the relation (2) where Г is the fracture resistance of the material, E is the plane strain elastic modulus ) 1 (    E E (using elastic constants from [15] can be evaluated as 379 GPa for GaN),…”