GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

Dussaigne, Amélie; Malinverni, Marco; Martin, D.; Castiglia, A.; Grandjean, N.

doi:10.1016/j.jcrysgro.2009.08.018

Cited by 29 publications

(13 citation statements)

References 13 publications

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“…The thermal mismatch with different TECs also induces a high tensile strain in the epilayer during the cooling down of the sample after growth. There are a lot of efforts in the GaN deposited on different types of diamond substrates, such as single crystal diamond (SCD) with (110), (111) or (100) orientations, nano-crystalline diamond, polycrystalline diamond, or the highly misoriented diamond substrate [49][50][51][52][53][54][55][56][57][58][59][60][61][62][63]. The growth methods include metal organic chemical vapor deposition (MOCVD), molecular beam epitaxial (MBE), HVPE and resonance plasma enhanced MOCVD (ECR-MOCVD) [49][50][51][52][53][54][55][56][57][58][59].…”

Section: Gan Epitaxially Grown On the Diamond Substratementioning

confidence: 99%

“…The quality of the GaN was improved when the SCD (111) substrate was utilized. In 2009, Dussaigne et al reported the GaN grown on (111) SCD substrate by ammonia-source molecular beam epitaxy (NH 3 -MBE) using an AlN buffer layer [52]. The reflectance high energy electron diffraction (RHEED) pattern demonstrated the good quality and smooth surface.…”

Section: Gan Epitaxially Grown On the Diamond Substratementioning

confidence: 99%

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Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices

Sang

2021

Functional Diamond

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Section: Gan Epitaxially Grown On the Diamond Substratementioning

confidence: 99%

Section: Gan Epitaxially Grown On the Diamond Substratementioning

confidence: 99%

Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices

Sang

2021

Functional Diamond

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“…Besides investigations on the adding of a diamond layer on existing GaN structures, 4,5 this research involves bonding of GaN on CVD diamond [6][7][8] and the application of siliconon-diamond substrates. 9,10 Recently, GaN has been deposited directly on several types of diamond substrate, [11][12][13][14][15] leading to the successful fabrication of an AlGaN/GaN HEMT on (111) single crystalline diamond by MBE. 16 Although this diamond (111) substrate offers a nice threefold symmetry as a template for the growth of hexagonal GaN, it is much more difficult to obtain and process in comparison to (001) diamond.…”

Section: Introductionmentioning

confidence: 99%

Realising epitaxial growth of GaN on (001) diamond

Dreumel

Tinnemans

Heuvel

et al. 2011

Journal of Applied Physics

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By an extensive investigation of the principal growth parameters on the deposition process, we realized the epitaxial growth of crystalline wurtzite GaN thin films on single crystal (001) diamond substrates by metal organic chemical vapor deposition. From the influence of pressure, V/III ratio, and temperature, it was deduced that the growth process is determined by the mass-transport of gallium precursor material toward the substrate. The highest temperature yielded an improved epitaxial relationship between grown layer and substrate. X ray diffraction (XRD) pole figure analysis established the presence of two domains of epitaxial layers, namely (0001) h10 10i GaN k (001) [110] diamond and (0001) h10 10i GaN k (001) ½1 10 diamond, which are 90 rotated with respect to each other. The presence of these domains is explained by the occurrence of areas of (2 Â 1) and (1 Â 2) surface reconstruction of the diamond substrate. When applying highly misoriented diamond substrates toward the [110] diamond direction, one of the growth domains is suppressed and highly epitaxial GaN on (001) diamond is realized.

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“…Common epitaxy techniques were applied, including CVD, [2,3,7,10,11] MBE [1,5,12,13] and magnetron sputtering [14]. However, the crystal quality of the deposited film is hampered by the very different thermal expansion coefficients and the lattice mismatch of both materials, which induce strain, defects and even macroscopic cracks at the interface [12]. As a consequence, device performance and efficiency can be significantly reduced.…”

Section: Heteroepitaxy On Diamondmentioning

confidence: 99%