GaN cascode performance optimization for high efficient power applications

Wu, Haw-Yun; Lin, Ming-Cheng; Yang, Nanying; Tsai, Chien-Hung; Wu, Chunlei; Lin, Yu‐Syuan; Chang, Y. C.; Chen, P.C.; Wong, King-Yuen; Kwan, M.-H.; Chan, Calvin M. L.; Yao, F.-W.; Tsai, M.W.; Yeh, Chih-Shen; Su, R.Y.; Yu, Jingshu; Yang, Fan; Tsai, Jai-Lin; Tuan, H.C.; Kalnitsky, A.

doi:10.1109/ispsd.2016.7520826

Cited by 12 publications

(5 citation statements)

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“…The capacitances at the internode (CINT), which are dependent on FP connection, include the gate-source capacitance of the D-mode part (CGS-D), the gate-drain capacitance of the E-mode (CGD-E) and the drain-source capacitance of the E-mode part (CDS-E). They have little effect on the drain voltage rise time and can be ignored, provided CINT is significantly larger than CDS-D [15]. Meanwhile, the connection difference in the D-mode FP of Device A and Device B (C and D) does not change the geometric capacitance induced by the FP and thus is expected to yield similar switching speed as observed.…”

Section: Discussionmentioning

confidence: 98%

Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors

Jiang

Lee

Zaidi

et al. 2019

IEEE Trans. Electron Devices

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Section: Discussionmentioning

confidence: 98%

Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors

Jiang

Lee

Zaidi

et al. 2019

IEEE Trans. Electron Devices

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“…Though in the cascode HEMT device there exists a low voltage MOSFET and in some cases a Zener diode (for protection), it is the HEMT component that dominates these capacitances [12]. The higher Coss of the Cascode HEMT compared to what the P-GaN HD-GIT can do is thus a direct reflection of the better performance of the P-GaN HD-GIT device technology over the HEMT.…”

Section: Capacitance-voltage Measurementsmentioning

confidence: 99%

An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices

Lophitis

Perkins

Arvanitopoulos

et al. 2022

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

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This work provides an experimentally driven performance comparison of commercial Gallium Nitride on Silicon (GaN-on-Si) power devices rated 600-650V at room and elevated temperatures with the focus being in assessing the on resistance (RON) increase due to hard switching in correlation to other performance indicators. Device technologies evaluated include the Enhancement (E-mode) AlGaN/GaN Hybrid Drain p-GaN layer Gate Injection Transistor (p-GaN HD-GIT), the cascode AlGaN/GaN High Electron Mobility Transistor (cascode HEMT). For the dynamic RON analysis, a special setup was utilized which allows synchronized drain and gate pulses, and the ability to switch from OFF to ON in as little as 20μs. The ability to apply a wide range of voltage levels, stress duration and temperature enabled measurable increase in the dynamic RON in both the cascode HEMT and the p-GaN HD-GIT. Nonetheless, the results highlight a strong difference in their robustness.

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“…For the Transphorm cascode device, the Ciss is dominated by the LV Si MOSFET, however, driver loss is less significant for High Voltage (HV) applications. In the cascode devices Coss is dominated by HV Metal Insulated Semiconductor Field Effect Transistors D-(MISFETs), which is promising due to D-MISFETs intrinsic low output capacitance property [28]. The cascode Gate to Drain Capacitance (Cgd), which determines major switching losses, is mainly composed of HV D-MISFET's the Drain to Source capacitance (Cds), the LV Si FET's Cgd/Coss ratio and Zener diode capacitance.…”

Section: On Resistance Measurementsmentioning

confidence: 99%

A comprehensive comparison of the static performance of commercial GaN-on-Si devices

Perkins

Arvanitopoulos

Gyftakis

et al. 2017

2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

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Gallium Nitride (GaN) based devices on Silicon (Si) substrates (GaN-on-Si) promise unmatched performance at low cost. Despite this theoretical promise, the lattice and thermal conductivity mismatch between the GaN and Si has obstructed the realization of reliable electrically graded high voltage devices. Recently, a small number of manufacturers have claimed the successful development of such devices. Panasonic and Transphorm among a few others have also made their devices available in the open market. The commercial availability of these devices, (something common only for mature technologies), proves the remarkable progress that has been achieved. In this paper, a comprehensive and experimentally derived comparison of the static performance is made between the 600 V Panasonic PGA26C09DV Gate Injected Transistor (GIT) and the 600 V Transphorm cascode TO-220 series devices. The Si 650 V Infineon SPA15N60C3 Super-Junction (S-J) provides a reference with Si technology. The Panasonic devices feature a p-GaN layer which makes them one of the first Enhancement mode (E-mode) GaN power devices on the market, whereas the Transphorm devices are Depletion-mode (D-mode) High Electron Mobility Transistors (HEMTs) cascaded with a low voltage (LV) Si Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Despite the Panasonic and Transphorm devices being examples of GaN-on-Si aiming for the same applications, the measurements and analysis shows that their performance is very different.

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GaN cascode performance optimization for high efficient power applications

Cited by 12 publications

References 0 publications

Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors

Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors

An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices

A comprehensive comparison of the static performance of commercial GaN-on-Si devices

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