GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation

Sztein, Alexander; Ohta, Hiromichi; Sonoda, Junichi; Ramu, Ashok T.; Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji

doi:10.1143/apex.2.111003

Cited by 61 publications

(42 citation statements)

References 15 publications

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“…InN is promising for TE applications since the large size of indium atoms potentially increases phonon scattering and accordingly reduce the thermal conductivity. 101 The highest reported ZT is about 1.6 for a 6 nm InN nanowire at 1000 K, which is 100 times larger than that at room temperature. 105 Hybrid, InN and Al 0.25 In 0.75 N devices structures prepared by radio-frequency (RF) sputtering have been fabricated.…”

Section: The Iii-nitrides For Thermoelectric Energy Harvestingmentioning

confidence: 94%

“…These were typically multijunction hybrid devices that were constructed from freestanding or epitaxial hydride vapor phase epitaxy (HVPE) grown GaN. 101,102 For example, a 3-pair epitaxial GaN layers device structure was fabricated for the purpose of on-chip integration. 103 In these prototypes of devices chromel was sputtered onto the SiO 2 glass substrate and then the GaN was physically soldered on.…”

Section: The Iii-nitrides For Thermoelectric Energy Harvestingmentioning

confidence: 99%

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Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. The III-Nitrides, typically composed of GaN and its alloys with Al and In, are compound semiconductor materials with superior properties and well developed growth techniques 1 that has enabled their use in a board range of applications. The III-Nitrides have a hexagonal wurtzite structure and a continuous alloy system with tunable direct bandgaps from 6.2 eV (AlN) through 3.4 eV (GaN) to 0.7 eV (InN) 2 ( Figure 1). This wide coverage of direct bandgap range from deepultraviolet (UV) to infrared region promises a variety of applications in optoelectronics, such as light-emitting diodes (LEDs), lasers, photodetectors and solar cells. GaN is recognized with high breakdown field, high thermal conductivity, and high electron mobility, making GaN an excellent candidate for high power and RF electronic devices. III-Nitrides exhibit high Seebeck coefficient and excellent temperature stability for high temperature thermoelectric applications. Doped GaN exhibit other unique properties with associated applications; such as transition and rare-earth metals doped GaN with magnetic properties, and indium (In)/gadolinium (Gd)/boron (B)/and lithium (Li) doped GaN for nuclear detection. The ability to access such a wide spectral region and these numerous applications has traditionally required the use of many different III-V materials and complex device structures before the advent of the III-Nitrides. [3][4][5][6][7][8][9] This paper will review various applications of III-Nitrides in including LEDs, solar cells, power and RF electronics, magnetic properties, thermoelectrics and nuclear detection applications, along with their development history, current state of art and future explorations. The III-Nitrides for Light-Emitting DiodesLight-Emitting Diodes are a type of solid state lighting (SSL) source with compact size, high energy efficiency and long lifetime. High brightness LEDs have various application in traffic lights, automobile brake ligh...

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Section: The Iii-nitrides For Thermoelectric Energy Harvestingmentioning

confidence: 94%

Section: The Iii-nitrides For Thermoelectric Energy Harvestingmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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“…8 The potential of III-nitride materials for thermoelectric applications has motivated increasing research on the experimental properties of GaN, 9,10 InGaN, 3,5,11,12 InAlN, [13][14][15] and AlInGaN 16,17 as well as III-nitride based thermoelectric devices. 18 There have also been a few attempts to calculate and predict the properties of these materials, most notably the thermoelectric properties of GaN, 4 AlGaN, 4,19 and InGaN. 19,20 These studies all use the Boltzmann transport equation (BTE) with the relaxation time approximation (RTA) to calculate the electrical transport properties and the Callaway model along with the virtual crystal approximation for phonon transport.…”

Section: Introductionmentioning

confidence: 99%

Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN

Sztein

Haberstroh

Bowers

et al. 2013

Journal of Applied Physics

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The thermoelectric properties of III-nitride materials are of interest due to their potential use for high temperature power generation applications and the increasing commercial importance of the material system; however, the very large parameter space of different alloy compositions, carrier densities, and range of operating temperatures makes a complete experimental exploration of this material system difficult. In order to predict thermoelectric performances and identify the most promising compositions and carrier densities, the thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN are modeled. The Boltzmann transport equation is used to calculate the Seebeck coefficient, electrical conductivity, and the electron component of thermal conductivity. Scattering mechanisms considered for electronic properties include ionized impurity, alloy potential, polar optical phonon, deformation potential, piezoelectric, and charged dislocation scattering. The Callaway model is used to calculate the phonon component of thermal conductivity with Normal, Umklapp, mass defect, and dislocation scattering mechanisms included. Thermal and electrical results are combined to calculate ZT values. InxGa1−xN is identified as the most promising of the three ternary alloys investigated, with a calculated ZT of 0.85 at 1200 K for In0.1Ga0.9N at an optimized carrier density. AlxGa1−xN is predicted to have a ZT of 0.57 at 1200 K under optimized composition and carrier density. InxAl1−xN is predicted to have a ZT of 0.33 at 1200 K at optimized composition and carrier density. Calculated Seebeck coefficients, electrical conductivities, thermal conductivities, and ZTs are compared with experimental data where such data are available.

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“…Recently, III-nitride semiconductors have been widely employed for energy-efficiency device technologies, including light-emitting diodes (LEDs) for solid state lighting [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19], visible diode lasers for both display and biosensing [20][21][22][23][24][25][26], photovoltaics and solar energy conversion [27][28][29], and thermoelectric heat conversion and active cooling materials [30][31][32][33][34][35][36][37][38][39]. In designing structures in nitride-based devices for photonics and electronics applications, the most-widely studied heterostructures have been primarily limited to AlGaN/GaN and InGaN/GaN configurations.…”

Section: Introductionmentioning

confidence: 99%

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

Zhang

et al. 2012

Journal of Crystal Growth

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GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation

Cited by 61 publications

References 15 publications

Review—The Current and Emerging Applications of the III-Nitrides

Review—The Current and Emerging Applications of the III-Nitrides

Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

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