Galvanomagnetic properties of semiconductor thin films and surface layers

Amith, A.

doi:10.1016/0022-3697(60)90239-0

Cited by 33 publications

(5 citation statements)

References 10 publications

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“…We must conclude that there is as yet no evidence for mobility being limited by surface scattering in polycrystalline thin films. Amith (1960) has also shown that the Hall constant should vary with thickness when X,>d but to a much smaller extent than mobility. Again, there appears to be no clear experimental evidence for this in polycrystalline films.…”

Section: Efject Ofjilm Thicknessmentioning

confidence: 98%

The Hall effect in polycrystalline and powdered semiconductors

1980

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T h e characterisation of the transport properties of semiconducting material through a combination of Hall effect and resistivity measurements is as important in understanding the electrical transport properties of polycrystalline and powdered semiconductors as it is for single-crystal semiconductors. However, the interpretation of these measurements for polycrystalline and powdered semiconductors is more complicated due to the presence of grain boundaries and trapped interface charges which lead to inter-grain band bending and potential barriers. I n recent years a resurgence of interest in these materials, due to their potential for large-area device applications, has led to a much better understanding of the influence of grain boundaries on these properties.This review surveys the development of this subject from its origins in the early 1950s to the recent advances of the last few years, showing the extent to which a considerable body of experimental results can now be understood in terms of simple theoretical models.We give a critical review of idealised two-phase geometrical models which, though first considered nearly 30 years ago, still form the basis of the subject. These treatments derive expressions for the resistivity and Hall coefficient of a composite material in terms of the properties of its constituents. We show that these models can be applied to the interpretation of transport measurements in polycrystalline films and powder layers.Important distinctions are made depending on whether the depletion layers extend completely or partially through the grains, whether the Debye length is greater or less than the grain size and whether the mean free path is greater or less than the grain size. When the depletion region extends only partially through the grain, the Hall effect measures the carrier concentration in the bulk of the grain while the Hall mobility should be given by p= po exp (-+b/kT) where +b is the bandbending and ,uo is related to the grain diameter 1. When the depletion region extends right through the grain, the carrier concentration measured may be very much lower than the bulk doping level but is still close to the carrier concentration in the centre of the grains. Band-bending is related to doping level N and interface trap density Nt. It reaches a maximum value when Nt=Nl, and ,u therefore shows a minimum.Consideration of the possibility of the mean free path being greater than the grain size 0034-4885/80/111263

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Section: Efject Ofjilm Thicknessmentioning

confidence: 98%

The Hall effect in polycrystalline and powdered semiconductors

1980

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“…However, the measured carrier concentrations are surf ace scattering and thickness dependent, just as for the cases of mobility or resistivity, when the number of carriers being scattered from the surf ace is much greater than the number not being scattered. The relationship of this scattering mechanism to the magnitude of the Hall constant has been treated by Amith [37] Zemel ~ al. [21,[38][39][40] compared the relative mobilities for a semiconductor film with a surface space-charge region present both without and with an applied magnetic field.…”

Section: Hall Effect Parametersmentioning

confidence: 99%

“…Fig [3][4][5][6][7][8][9][10][11][12]. The Hall coefficient correction factor as a function of the ratio of mean surface scattering length to film half-thickness (from Amith[37]). …”

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confidence: 99%

Electrical Properties of Polycrystalline Semiconductor Thin Films

Kazmerski¹

1980

Polycrystalline and Amorphous Thin Films and Devices

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“…Such a treatment sharply increases the density of surface states (Fig. 4b) [16], which, in turn, can bring about a higher degree of diffusivity of surface scattering [17,18] and a larger velocity of intervalley scattering on the surface S. The first factor should bring the observed anisotropy in better agreement with theory calculated with the assumption that the surface scattering is completely diffuse, the second factor can reduce the degree of anisotropy (up to its complete disappearance) owing to the intense intervalley scattering in the SCR layer. The experimentally observed change of K(Y,) a t T = 300 O K proves that such a treatment affects the value of K unconstantially (Fig.…”

Section: Resultsmentioning

confidence: 99%

Investigation of the anisotropy of surface conductance in n-type germanium

Gorkun

Litovchenko

Lysenko

et al. 1973

Phys. Stat. Sol. (a)

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The anisotropy of the surface mobility for oriented, nearly intrinsic n‐type germanium samples were investigated at different temperatures (77 to 300° K) and different states of surface. For the (112) plane the anisotropy coefficient was found to be about 15% at large accumulation bend of bands, Ys ≈︁ 0.15 eV, and zero at small Ys. Values of the length of the intervalley scattering of carriers in the above mentioned temperature region have been obtained. Also calculations on the conductance anisotropy of the space charge region (SCR) for the multivalley current carrier spectrum of n‐germanium are presented. For large accumulation layers the theoretical predicted anisotropy coefficient coincide with experimental ones.

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Galvanomagnetic properties of semiconductor thin films and surface layers

Cited by 33 publications

References 10 publications

The Hall effect in polycrystalline and powdered semiconductors

The Hall effect in polycrystalline and powdered semiconductors

Electrical Properties of Polycrystalline Semiconductor Thin Films

Investigation of the anisotropy of surface conductance in n-type germanium

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