Galvanomagnetic effects in graphite—I

Dillon, R. O.; Spain, Ian L.; Woollam, John A.; Lowrey, W. H.

doi:10.1016/0022-3697(78)90104-x

Cited by 46 publications

(9 citation statements)

References 28 publications

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“…The fractional increase is comparable to the increase in the carrier density over the same temperature range. 18 From Eq. (9) it is evident that the behavior of 1 / T 2 is determined by the time integral of a correlation function associated with the fluctuations in the orbital angular momentum.…”

Section: Discussionmentioning

confidence: 99%

Fluctuating field model for conduction electron spin resonance in graphite

et al. 2004

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We outline a theory for conduction electron-spin resonance (CESR) in highly oriented pyrolytic graphite. The fundamental approximation is to treat the spin-orbit interaction as an effective field. In this approach, the shift in the g factor, which is associated with the mean value of the field, is related to the orbital susceptibility of the electrons. The linewidth comes from fluctuations in the effective field caused by the scattering of the electrons. The theory is used to interpret our CESR measurements.

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Section: Discussionmentioning

confidence: 99%

Fluctuating field model for conduction electron spin resonance in graphite

et al. 2004

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“…There exists an experimental evidence that the applied magnetic field increases the free carrier density in graphite [51,52].…”

mentioning

confidence: 99%

Universal magnetic-field-driven metal-insulator-metal transformations in graphite and bismuth

et al. 2006

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“…Highly oriented graphite ͑single crystals͒ is a semimetal with mixed conduction. 42 It exhibits intrinsic carrier concentrations and mobilities in the range of 10 18 -10 20 cm −3 and 10 2 -10 4 cm 2 / V s, respectively. However, Raman spectroscopy shows that our Ar-implanted sample contains graphitic crystals with an average size of 5 nm.…”

Section: Resultsmentioning

confidence: 99%

n -type conductivity in high-fluence Si-implanted diamond

Weishart

Heera

Skorupa

2005

Journal of Applied Physics

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Epitaxial SiC nanocrystals are fabricated by high-fluence Si implantation into natural diamond at elevated temperatures between 760 and 1100 °C. Fluences under investigation range from 4.5 to 6.2×1017Sicm−2. This implantation scheme yields a buried layer rich of epitaxially aligned SiC nanocrystals within slightly damaged diamond. The generation of a small fraction of graphitic sp2 bonds of up to 15% in the diamond host matrix cannot be avoided. Unintentional coimplantation with nitrogen results in a very high doping level of more than 1021cm−3. Resistivity and Hall measurements in van der Pauw geometry reveal a high, thermally stable n-type conductivity with electron concentrations exceeding 1020cm−3 and mobilities higher than 2cm2∕Vs. It is supposed that both the SiC regions as well as the diamond matrix exhibit n-type conductivity and that the electron transport occurs across the low-resistivity SiC nanograins. In the SiC nanocrystals the electrons originate from nitrogen donors whereas in diamond defects are responsible for the electron conductivity. The formation of disordered graphite, which leads to low electron mobility, is substantially reduced by the SiC formation.

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Galvanomagnetic effects in graphite—I

Cited by 46 publications

References 28 publications

Fluctuating field model for conduction electron spin resonance in graphite

Fluctuating field model for conduction electron spin resonance in graphite

Universal magnetic-field-driven metal-insulator-metal transformations in graphite and bismuth

n -type conductivity in high-fluence Si-implanted diamond

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