Gallium Indium Nitride-Based Green Lasers

Sizov, D. S.; Bhat, R.; Zah, Chung−En

doi:10.1109/jlt.2011.2176918

Cited by 70 publications

(41 citation statements)

References 99 publications

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“…1(c). It is worth noting that also other authors reported that lasing from polar InGaN QWs is expected/observed when the electric field related to polarization effects is partially screened [14,32,33].…”

Section: Resultsmentioning

confidence: 71%

“…In addition, the broadening of optical gain, which is related to QW inhomogeneities, decreases the gain value in the peak position. Also the built-in electric field is this factor which decreases the value of optical gain [14]. Finally to achieve a positive gain in inhomogeneous polar InGaN QWs much larger carrier concentration is required than this one needed for a perfectly homogeneous QW.…”

Section: Resultsmentioning

confidence: 99%

“…Wurtzite InGaN quantum wells (QWs) are a very important gain medium for fabricating optoelectronic devices, such as near ultraviolet, blue, and green light emitting diodes (LEDs) and laser diodes (LDs) [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. The growth of InGaN QWs along the [0001] direction leads to a QW system with a very strong quantum confined Stark effect due to the large internal electric fields which result from discontinuities in spontaneous and piezoelectric polarization at QW heterointerfaces [15,16].…”

Section: Introductionmentioning

confidence: 99%

“…This issue is especially important for green InGaN LEDs and LDs because of higher indium concentrations, i.e., larger strains and hence stronger piezoelectric fields incorporated in these devices [14]. In addition to the strong built-in electric field, other effects like (i) indium content fluctuations including a formation of indium-rich areas similar to quantum dots, (ii) generation of native point defects and threading dislocations are expected to be crucial for InGaN QWs dedicated for the green spectral range [14]. An accurate diagnostic of each effect seems to be necessary for the optimization of growth conditions and the improvement of LEDs and LDs performances.…”

Section: Introductionmentioning

confidence: 99%

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Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

et al. 2013

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It is shown that in polar InGaN QWs emitting in the blue-green spectral region a Stokes shift between spontaneous emission (SE) and optical transition observed in contactless electroreflectance (CER) spectrum (absorptionlike technique) can be observed even at room temperature, despite the fact that the SE is not associated with localized states. Time resolved photoluminescence measurements clearly confirm that the SE is strongly localized at low temperatures whereas at room temperature the carrier localization disappears and the SE can be attributed to the fundamental transition in this QW. The Stokes shift is observed in this QW system because of the large built-in electric field, i.e., the CER transition is a superposition of all optical transitions with non-zero electron-hole overlap integrals and, therefore, the energy of this transition does not correspond to the fundamental transition of InGaN QW. Lasing from this QW has been observed at the wavelength of 475 nm, whereas the SE was observed at 500 nm. The 25 nm shift between the lasing and SE is observed because of a screening of the built-in electric field by photogenerated carriers. However, our analysis shows that the built-in electric field inside the InGaN QW region is not fully screened under the lasing conditions.

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Section: Resultsmentioning

confidence: 71%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

et al. 2013

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“…We report an optically pumped green perovskite verticalcavity surface-emitter operating in continuous-wave (CW) with a power density threshold of ∼89 kW∕cm 2 . The device has an active region of CH 3 NH 3 PbBr 3 embedded in a dielectric microcavity; this feat was achieved with a combination of optimal spectral alignment of the optical cavity modes with the perovskite optical gain, an adequate Q-factor of the microcavity, adequate thermal stability, and improved material quality with a smooth, passivated, and annealed thin active layer.…”

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confidence: 99%