GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm

Abstract

We demonstrate a GaAs-based p-i-n resonant-cavity-enhanced (RCE) GaInNAs photodetector operating near 1.3 μm. The device design was optimized using a transfer matrix method and experimental absorption spectra obtained from p-i-n structures grown without a resonant cavity. The RCE photodetector was fabricated in a single growth step by using GaAs/AlAs distributed Bragg reflectors for the top and bottom mirrors. A 72% quantum efficiency was obtained with a full width at half maximum of 11 nm.

Long wavelength bulk GaInNAs p−i−n photodiodes lattice matched to GaAs

“…Reports on the electrical characteristics and photoresponse of bulk Ga 1−x In x N y As 1−y diodes operating at wavelengths up to 1.3 m are limited to. [4][5][6][7] The p − i − n diodes reported in Ref. 6 had Ga 1−x In x N y As 1−y i regions up to 2 m thick, but the absorption edge was less than ϳ1.22 m and the reverse dark currents were measured for a limited field range up to 25 kV/cm.…”

“…1 It can therefore extend the photoresponse of GaAs-based optoelectronic devices to beyond 1.3 m, which previously could only be achieved by strained In x Ga 1−x As/ GaAs quantum wells or metamorphic InGaAs layers. 2 Hence, there is interest in using this material for GaAs-based photodetectors [3][4][5][6][7][8] and multijunction photovoltaic cells. 9,10 GaAs-based photodetectors can utilize highreflectivity AlAs/GaAs mirrors 4 and the Ga 1−x In x N y As 1−y material has been predicted to have low avalanche noise, 8 while photovoltaic cells can benefit from long wavelength absorption.…”

Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths

“…8 Based on this material system, lasing and light detection have been realized for the near infrared. [9][10][11][12] Recently, we presented a GaAs/AlGaAs resonant tunneling diode (RTD) with GaInNAs absorption layer for telecommunication light sensing with a sensitivity of 10 3 A/W, with the RTD serving as internal amplifier of weak electric signals, caused by photo-excited charge carriers. 13 RTDs with embedded quantum dots have even been demonstrated as single photon detectors for visible and near infrared wavelengths at cryogenic temperatures.…”

Low multiplication noise thin Al/sub 0.6/Ga/sub 0.4/As avalanche photodiodes

“…One way to overcome this problem is to use a wider bandgap material such as , with consequently reduced tunnelling current. Recently, Heroux et al [7] showed that GaInAs alloyed with a dilute concentration of N and grown on a GaAs substrate strongly absorbs incident light at 1.3 m wavelength.…”