Low multiplication noise thin Al/sub 0.6/Ga/sub 0.4/As avalanche photodiodes

Tan, Chee Hing; David, J.P.R.; Plimmer, S.A.; Rees, G.J.; Tozer, R.C.; Grey, R.

doi:10.1109/16.930644

Cited by 42 publications

(11 citation statements)

References 27 publications

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“…The proposed model is presented in Sec.II. Calibration against experiments in [15]- [17] and [22], [23] for p-i-n APDs is reported in Sec.III. The model is then applied to template staircase APDs in Sec.IV to demonstrate that it is consistent with the theory in [12].…”

Section: Introductionmentioning

confidence: 99%

An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation

Pilotto

Palestri

Selmi

et al. 2018

IEEE Trans. Electron Devices

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We present a non-local history-dependent model for impact ionization gain and noise in avalanche photodiodes (APDs) especially suited for staircase APDs. The model uses a simple energy balance equation to define effective electric fields valid also in the presence of band discontinuities which are then used to express the ionization coefficients. The model parameters have been calibrated against literature data for gain and noise in GaAs and AlxGa1−xAs (x = 0.2, 0.6, 0.8) p-in diodes. Application to experimental data for gain and noise in heterojunction and staircase SAM-APDs is reported to demonstrate the ability of the model in describing complex APD structures. It is found that, in spite of conduction band discontinuities being much larger than valence band ones, hole impact ionization contributes a significant degradation of the noise metrics in GaAs/AlGaAs staircase APDs. These non-trivial insights demonstrate the usefulness of the model to steer device design and optimization.

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Section: Introductionmentioning

confidence: 99%

An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation

Pilotto

Palestri

Selmi

et al. 2018

IEEE Trans. Electron Devices

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“…In determining its gain, multiplication noise, and the gain-bandwidth product, the multiplication region of an APD plays a critical role. Sub-micron scaling [15][16][17][18][19][20][21][22][23][24] of the thickness of the multiplication region has been found to give lower multiplication noise and higher gain-bandwidth products in APDs. This is due to the non-local nature of impact ionization, which can be neglected if the thickness of the multiplication region is much greater than the "dead length", which is the minimum distance carriers travel to gain sufficient energy to impact ionize.…”

Section: Long-wavelength Impact-ionization-engineered Avalanche Photmentioning

confidence: 99%

Photodetectors: UV to IR

et al. 2003

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“…Their theory, however, does not address the variance and the autocorrelation impulse response function. Hayat et al 23 formulated a recurrence theory for avalanche multiplication that included the gain statistics and impulse response curve under non-uniform static electric fields. Tan et al 24 later extended that theory to accommodate for stochastic carrier velocity.…”

Section: B Statistics Of An Impulse Responsementioning

confidence: 99%

Time resolved gain and excess noise properties of InGaAs/InAlAs avalanche photodiodes with cascaded discrete gain layer multiplication regions

Williams

Ramírez

Hayat

et al. 2013

Journal of Applied Physics

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To predict pulse detection performance when implemented in high speed photoreceivers, temporally resolved measurements of a 10-stage InAlAs/InGaAs single carrier multiplication (SCM) avalanche photodiode (APD)'s avalanche response to short multi-photon laser pulses were explained using instantaneous (time resolved) pulse height statistics of the device's impulse response. Numeric models of the junction carrier populations as a function of the time following injection of a primary photo-electron were used to create the probability density functions (pdfs) of the instances of the avalanche buildup process. The numeric pdfs were used to generate low frequency gain and excess noise models, which were in good agreement with analytic models of multiple discrete low-gain-stage APDs and with measured excess noise data. The numeric models were then used to generate the instantaneous and cumulative instantaneous low order statistics of the instances of the impulse response. It is shown that during the early times of the impulse response, the SCM APDs have lower excess noise than the pseudo-DC measurements and the common APDmodels used to describe them. The methods of determining the time resolved low order statistics of APDs are described and the importance of using time-resolved models of APDgain and noise is discussed.

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Low multiplication noise thin Al/sub 0.6/Ga/sub 0.4/As avalanche photodiodes

Cited by 42 publications

References 27 publications

An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation

An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation

Photodetectors: UV to IR

Time resolved gain and excess noise properties of InGaAs/InAlAs avalanche photodiodes with cascaded discrete gain layer multiplication regions

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