GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm

Abstract

We demonstrate that a careful optimization of the molecular-beam-epitaxy growth conditions allows us to obtain high-quality GaInNAs/GaAs quantum-well (QW) heterostructures exhibiting a perfect two-dimensional microstructure at high In and N contents. Room-temperature emission is achieved up to 1.61 and 1.51 μm for as-grown and annealed samples, respectively. High-resolution x-ray diffraction and transmission electron microscopy reveal that post-growth annealing does not affect the QW composition and width. This confirms that the GaInNAs semiconducting material is well suited for emission in the telecommunication wavelength range near 1.55 μm.

Optimization of 1.3μm metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy

“…Great efforts have also been made to push the wavelength towards 1.55 mm [6][7][8][9]. For InAs QDs, light emission up to 1.5 mm was reported [7], while for the GaInNAs QWs photoluminescence (PL) up to 1.61 mm [10] and lasing wavelength as long as 1.59 mm were demonstrated recently [11]. There are, however, still many problems involved with these GaAs-based devices.…”

Interdiffusion induced In(Ga)NAs films growth on GaAs substrates by low-pressure metalorganic chemical vapor deposition

“…For the past few years there has been a considerable experimental and theoretical interest in III-N-As compound alloys due to their peculiar physical properties and great potential device applications [1][2][3][4][5][6]. GaInNAs and/or GaNAs films grown on GaAs substrates have been extensively investigated for 1.3 and 1.55 mm lasers for telecommunication as well as for high-efficiency solar cells [5,6].…”

“…GaInNAs and/or GaNAs films grown on GaAs substrates have been extensively investigated for 1.3 and 1.55 mm lasers for telecommunication as well as for high-efficiency solar cells [5,6]. For mid-infrared wavelength (especially in the 3-5 and 8-12 mm atmospheric air window bands) detectors and lasers applications, the InNAs ternary alloy is a leading candidate material [1][2][3][4]. To date, there have been some reports on InNAs films growth using either molecular-beam epitaxy (MBE) [7][8][9] or metalorganic chemical vapor deposition (MOCVD) [10,11].…”

Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsN

“…For [N] ¼ 6 Â 10 19 cm À3 the lattice parameter is larger than the one of GaAs by 0.2 percent. This increase of the unstrained lattice parameter is confirmed by X-ray diffraction experiments [9]. This increase of the lattice parameter of the GaAsN layer is explained by the incorporation of N atoms in interstitial sites [9].…”

“…This increase of the unstrained lattice parameter is confirmed by X-ray diffraction experiments [9]. This increase of the lattice parameter of the GaAsN layer is explained by the incorporation of N atoms in interstitial sites [9]. Normally, the substitution of As atoms by N atoms in GaAs gives a decrease of the lattice parameter of GaAsN.…”