GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodes

Enhanced Solar Cell Conversion Efficiency of InGaN/GaN Multiple Quantum Wells by Piezo-Phototronic Effect

“…Circular ohmic contacts were made by depositing Ti/Al/Ni/Au with an e-beam and annealing at 850 °C for 30 s in a N 2 atmosphere, which is shown in Figure 1f3. 30 Conductive indium tin oxide (ITO) was sputtered at the surface of p-GaN as the current spreading layer, due to its high transparency in the visible spectral region. 31 Finger electrodes (Ni/Au 230 nm) were deposited on the ITO, as shown in Figure 1f4.…”

“…After that, a “back”-shaped area was etched down about 1 μm to expose the n-GaN for ohmic contact formation and define the active mesa. Circular ohmic contacts were made by depositing Ti/Al/Ni/Au with an e-beam and annealing at 850 °C for 30 s in a N 2 atmosphere, which is shown in Figure f3 . Conductive indium tin oxide (ITO) was sputtered at the surface of p-GaN as the current spreading layer, due to its high transparency in the visible spectral region .…”

Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

“…Previously, the use of Schottky barrier (SB) contacts which is one possible type of ED was demonstrated to realize SB GaInN/GaN solar cell devices without any p-doped region [49], [50]. GaN based n-channel SB-MOSFET has also been reported before [51].…”

“…Other than in conventional Si-based material, the SB based solar cell has also been demonstrated in CNTs [91], cadmium sulphide (CdS) [92] and molybdenum disulfide (MoS 2 ) [93]. In addition, an SB based solar cell has been demonstrated in the GaInN/GaN material system without any p-type doped region [49], [50].…”