GaInAsPSb/GaSb heterostructures for mid‐infrared light emitting diodes

Smirnov, V. N.; Batty, P. J.; Jones, Robert A.; Krier, A.; Васильев, В. И.; Gagis, G. S.; Kuchinskiĭ, V. I.

doi:10.1002/pssa.200674141

Cited by 5 publications

(2 citation statements)

References 6 publications

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“…In such a case, suppression of non-radiative CHHS recombination takes place resulting in the improvement of luminescent characteristics. Moreover, such an approach is capable of enabling room-temperature electroluminescence as was reported earlier for p-i-n GaInAsPSb/p-GaSb homostructures at a wavelength of about 4 μm [18,19].…”

Section: Luminescent Characteristicsmentioning

confidence: 60%

Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3–5 µm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3–5 µm)

Gagis¹,

Васильев²,

Deryagin³

et al. 2008

Semicond. Sci. Technol.

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A novel class of narrow-bandgap semiconductor materials is proposed as well as heterostructures based on these materials and suitable for the fabrication of mid-infrared optoelectronic devices, such as room-temperature laser diodes and thermo-photovoltaic converters. Our experimental data on infrared emission of such materials demonstrate high effectiveness of photoluminescence in a wavelength range 3-3.4 μm at room temperature. Simulations of the operating characteristics of room-temperature laser diodes, based on suggested heterostructures, show that their threshold current does not exceed 1 kA cm −2 due to suppression of the CHHS Auger-recombination process.

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Section: Luminescent Characteristicsmentioning

confidence: 60%

Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3–5 µm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3–5 µm)

Gagis¹,

Васильев²,

Deryagin³

et al. 2008

Semicond. Sci. Technol.

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“…The presence of the fifth element in the alloy allows an additional degree of freedom for tailoring the performance of the device, while keeping the lattice parameter constant [1,2]. GaInAsSbPbased LEDs have been previously fabricated in our laboratory on both InAs [3] and GaSb [4,5] substrates. Also, GaInAsSbP has been shown to be a promising material for use in low bandgap thermophotovoltaic cells [6].…”

Section: Introductionmentioning

confidence: 99%

Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

Cheetham

Carrington

Krier

et al. 2011

Semicond. Sci. Technol.

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The Raman spectra of pentanary GaInAsSbP alloys are reported for the first time.Measurements were performed at room temperature on epilayers which were grown using liquid phase epitaxy outside of the miscibility gap and nominally lattice matched to (1 0 0) InAs and GaSb. The dominant phonon peaks in the spectra are identified and attributed to InSb-, InP-, GaAs-and (GaSb+InAs)-like phonons, along with disorder-activated phonons. No GaP-like phonons were observed. Further peaks were also attributed to disorder-activated optical and longitudinal acoustic phonons, associated with alloy disorder effects.

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Liquid‐Phase Epitaxy

Mauk¹

2023

Digital Encyclopedia of Applied Physics

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Liquid‐phase epitaxy (LPE) is a crystal growth method that produces single‐crystal films or layers of semiconductors and other types of materials on a supporting substrate. LPE‐grown structures include light‐emitting diodes (LEDs), laser diodes, and photodetectors; energy conversion devices such as photovoltaic cells, and various magnetic and optical devices. LPE is typically affected by solidifying a film comprising solute components precipitated from a molten metallic solution at temperatures ranging from several hundred to >1200 °C. A common LPE technology is based on a crucible slider apparatus in a temperature‐programmed furnace with a hydrogen ambient at atmospheric pressure. Multiple layer depositions generate a wide range of structures, and LPE has proven especially useful for III–V compound semiconductor heterostructures. Present‐day uses of LPE stem from favorable features such as fast growth rates, low defect densities, a wide choice of impurity dopants, and straightforward formulations based on phase equilibria and kinetics data and models. While LPE was a prominent epitaxy technology in the 1970s and 1980s, nowadays LPE is relegated to niche applications. Compared to competing epitaxy technologies such as molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD), LPE falls short with regard to the achievement of ultrathin layered structures, strained or lattice‐mismatched structures, abrupt interfaces, and areal uniformity. Still, there are significant application areas well served by LPE or by modified LPE techniques, as reviewed here.

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GaInAsPSb/GaSb heterostructures for mid‐infrared light emitting diodes

Cited by 5 publications

References 6 publications

Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3–5 µm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3–5 µm)

Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3–5 µm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3–5 µm)

Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

Liquid‐Phase Epitaxy

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