GaInAsP/InP surface emitting injection lasers with short cavity length

Soda, H.; Motegi, Yuichi; Iga, Kenichi

doi:10.1109/jqe.1983.1072000

Cited by 40 publications

(4 citation statements)

References 9 publications

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“…In this article we refer this approach of fabricating DBR mirrors as non-epitaxial or dielectric DBRs, interchangeably. After the conceptual proposal of VCSEL by K. Iga in 1977 [23], dielectric DBRs and/or metal reflectors were the only options toward the realization of this novel device [24][25][26][27]. However, since the semiconductor gain region (a double heterostructure, DH, or multiple quantum wells, MQWs) of a VCSEL needs to be prepared epitaxially on a single crystalline substrate, major fabrication efforts had to be exerted to remove the single crystalline substrates, or to expose the backside of the active region, and to coat both the top and bottom surfaces of the gain region with non-epitaxial DBR mirrors.…”

Section: Fabrication Techniques Of Dbrsmentioning

confidence: 99%

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

2019

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A distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor microcavities and vertical cavity surface emitting lasers (VCSELs). The success in epitaxial GaAs DBR mirrors paved the way for the ubiquitous deployment of III-V VCSELs in communication and mobile applications. However, a similar development of GaN-based blue VCSELs has been hindered by challenges in preparing DBRs that are mass producible. In this article, we provide a review of the history and current status of forming DBRs for GaN VCSELs. In general, the preparation of DBRs requires an optimization of epitaxy/fabrication processes, together with trading off parameters in optical, electrical, and thermal properties. The effort of epitaxial DBRs commenced in the 1990s and has evolved from using AlGaN, AlN, to using lattice-matched AlInN with GaN for DBRs. In parallel, dielectric DBRs have been studied since 2000 and have gone through a few design variations including epitaxial lateral overgrowth (ELO) and vertical external cavity surface emitting lasers (VECSEL). A recent trend is the use of selective etching to incorporate airgap or nanoporous GaN as low-index media in an epitaxial GaN DBR structure. The nanoporous GaN DBR represents an offshoot from the traditional epitaxial approach and may provide the needed flexibility in forming manufacturable GaN VCSELs. The trade-offs and limitations of each approach are also presented.

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Section: Fabrication Techniques Of Dbrsmentioning

confidence: 99%

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

2019

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“…Although the VCSEL structure is designed for vertical emission, light can propagate in the plane of the VCSEL material [15][16][17][18][19]. In many cases, the in-plane mode can propagate with low optical loss, as the separate confinement heterostructure (SCH) effectively forms a multi-layer slab waveguide [16,17].…”

Section: Authorsmentioning

confidence: 99%

Gain measurements on VCSEL material using segmented contact technique

Hentschel

Allford²,

Gillgrass³

et al. 2023

J. Phys. D: Appl. Phys.

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We report direct measurements of the optical gain on vertical-cavity surface-emitting laser (VCSEL) material using a stripe-length method featuring segmented contacts. We utilise the similarity of the in-plane transverse electric (TE) polarised matrix element and that of the VCSEL lasing mode and a simple method to reduce round trip effects. The confinement factor is determined from cold-cavity simulations of the in-plane TE polarised slab waveguide mode and used to convert the measured in-plane modal gain into the vertical-cavity modal gain, as required for the VCSEL structure. This gives a threshold material gain of 1440 ± 140 cm−1 at 30 °C for this structure. A comparison with the threshold material gain values determined from the lasing condition, where internal optical losses due to doping induced absorption is included using parameters taken from the literature, indicates the presence of an additional source of optical loss in the experiment which increases the threshold material gain by ∼450 cm−1. A best fit is obtained by increasing the optical loss in the n-DBR (distributed Bragg reflectors) layers to 40 cm−1, which is consistent with previous work on additional scattering losses due to interface roughening in the n-DBR layers. To further demonstrate the utility of this method for rapid optimisation, the gain-peak wavelength is measured directly, and its temperature dependence is compared to the lasing wavelength.

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“…5) can further reduce the thickness of the active layer to the nano-level producing the quantum effect. It makes the limitation of carriers and light fields be further strengthened and the forbidden bandwidth reduce from E g to E gw [30], [31]. Based on these characteristics, the loss of the particle conversion in semiconductor gain can be quite small, and the threshold value is also greatly reduced.…”

Section: Beam Energy Generation Modelmentioning

confidence: 99%

High-Efficiency Resonant Beam Charging and Communication

Bai¹,

Liu²,

Wang³

et al. 2021

Preprint

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Simultaneous wireless information and power transfer (SWIPT) has been envisioned as an enabling technology for future 6G by providing high-efficiency power transfer and high-rate data transmissions concurrently. In this paper, we propose a resonant beam charging and communication (RBCC) system utilizing the telescope internal modulator (TIM) and the semiconductor gain medium. TIM can concentrate the diverged beam into a small-size gain module, thus the propagation loss is reduced and the transmission efficiency is enhanced. Since the semiconductor gain medium has better energy absorption capacity compared with the traditional solid-state one, the overall energy conversion efficiency can be improved. We establish an analytical model of this RBCC system for SWIPT and evaluate its stability, output energy, and spectral efficiency. Numerical analysis shows that the proposed RBCC system can realize stable SWIPT over 10 meters, whose energy conversion efficiency is increased by 14 times compared with the traditional system using the solid-state gain medium without TIM, and the spectrum efficiency can be above 15 bit/s/Hz.

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GaInAsP/InP surface emitting injection lasers with short cavity length

Cited by 40 publications

References 9 publications

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

Gain measurements on VCSEL material using segmented contact technique

High-Efficiency Resonant Beam Charging and Communication

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