Gain characteristics and femto-second optical pulse response of 1550nm-band multi-stacked QD-SOA grown on InP(311)B substrate

Matsumoto, Atsushi; Takei, Yoshinori; Matsushita, A.; Akahane, Kouichi; Matsushima, Yuichi; Ishikawa, Hiroshi; Utaka, Katsuyuki

doi:10.1016/j.optcom.2015.01.034

Cited by 16 publications

(12 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As future tasks, higher‐speed response and improved pattern effect, especially XGM operation, should be developed. For this purpose, the use of an assist light, and/or a quantum dot (QD) SOA may be very promising for higher than 100 Gbps operation …”

Section: Resultsmentioning

confidence: 99%

Demonstration of All-Optical Logic Gate Device Using MQW-SOA and 10 Gbps XNOR Operation

Akashi

Matsui

Isawa

et al. 2018

Phys. Status Solidi A

Self Cite

View full text Add to dashboard Cite

All-optical logic gate device as a label recognition device for all optical packet networks, which is integrated with a multi-quantum-well semiconductor optical amplifier (MQW-SOA) and double micro-ring resonators (MRRs) is proposed. The nonlinearity of an MQW-SOA such as cross-gain modulation (XGM) and four-wave mixing (FWM) is investigated, and the operation conditions of the input powers and the wavelengths are clarified for efficient XGM and FWM operation. On the basis of these conditions, all-optical XNOR operation at 10 Gbps is demonstrated with clear eye opening

show abstract

Section: Resultsmentioning

confidence: 99%

Demonstration of All-Optical Logic Gate Device Using MQW-SOA and 10 Gbps XNOR Operation

Akashi

Matsui

Isawa

et al. 2018

Phys. Status Solidi A

Self Cite

View full text Add to dashboard Cite

show abstract

“…The experimental setup for evaluating the gain recovery time is shown in Fig. . We utilized the picosecond optical pulses mentioned above, whose repetition rate was 10 GHz, and formed two serial duplicated pulses by using a 3 dB coupler and optical delay line, which was inserted in one of the two passes, as shown in Fig.…”

Section: Measurements and Discussionmentioning

confidence: 99%

Dynamic characteristics of 20‐layer stacked QD‐SOA with strain compensation technique by ultrafast signals using optical frequency comb

Matsumoto

Akahane

Sakamoto

et al. 2016

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

This is an open access article under the terms of the Creative Commons Attribution-NonCommercial License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.In this article, we evaluated the static and dynamic characteristics of 20-layer stacked quantum dot semiconductor optical amplifiers (QD-SOAs) grown on an InP(311)B substrate with a strain compensation technique by ultrafast signals using an optical frequency comb. The gain peak wavelength of the fabricated QD-SOA was 1520 nm, and a maximum gain of approximately 15.8 dB was obtained when the injection current was 350 mA. By using optical bit rate multiplier modules, an optical pulse, which was generated by the use of the optical frequency comb, was multiplexed. We observed the dynamic behavior of the QD-SOA with the pulse trains. The minimum interval between pulses was 4.2 ps, and we measured using an optical sampling oscilloscope. It was found the QD-SOA could respond to ultrafast pulses that were equivalent to the signals of 220 Gb s À1 class speed without any large pattern distortions. In addition, we could obtain a rather clear optical pulse waveform. We also estimated the gain recovery time of the QD-SOA to be 6.0 ps by using a pump probe-like method. One of the reasons that the fabricated QD-SOA could respond to ultrafast signals was its ultrashort gain recovery time.

show abstract

“…The QD occupation probabilities n 2 and n 1 are calculated for a realistic operating current density of J = 5e2 A/cm 2 and different QD elongations. 10 For a wide range of output powers (P out < 0.1 mW) the occupation is constant for all elongations meaning that the complete inversion of the QD ground states can be preserved (n 1 = 1) due to the fast refilling dynamic on a femto-to picosecond timescale (figure 3). Figure 5: a) Wetting layer carrier concentration N W (solid), steady state occupation probabilities of the QD ground state n 1 (dashed) and excited state n 2 (dotted) as well as b) chip gain as function of output power for QD-SOAs with differently elongated QDs at an injection current density of 5e2 A/cm 2 .…”

Section: Gain Enhancementmentioning

confidence: 99%

Twofold gain enhancement by elongation of QDs in polarization preserving QD-SOAs

Greif¹,

Mittelstädt²,

Jagsch³

et al. 2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The impact of quantum dot (QD) elongation on key parameters of QD-based semiconductor optical amplifiers (SOAs) is investigated using a combination of 8-band k•p -theory including strain and piezoelectricity up to second order and a rate equation model describing the population of QD ground, excited and wetting layer states. By considering columnar QDs of selected aspect ratios, we show that chip gain and saturation gain can be enhanced by up to +3.6 dB via an increased elongation of the individual QDs while retaining polarization preserving amplification and gain recovery times below 700 fs. Our results enable the optimization of polarization preserving QD-SOA devices which combine ultrafast gain recovery with high gain and low power consumption.

show abstract

Gain characteristics and femto-second optical pulse response of 1550nm-band multi-stacked QD-SOA grown on InP(311)B substrate

Cited by 16 publications

References 18 publications

Demonstration of All-Optical Logic Gate Device Using MQW-SOA and 10 Gbps XNOR Operation

Demonstration of All-Optical Logic Gate Device Using MQW-SOA and 10 Gbps XNOR Operation

Dynamic characteristics of 20‐layer stacked QD‐SOA with strain compensation technique by ultrafast signals using optical frequency comb

Twofold gain enhancement by elongation of QDs in polarization preserving QD-SOAs

Contact Info

Product

Resources

About