All-optical logic gate device as a label recognition device for all optical packet networks, which is integrated with a multi-quantum-well semiconductor optical amplifier (MQW-SOA) and double micro-ring resonators (MRRs) is proposed. The nonlinearity of an MQW-SOA such as cross-gain modulation (XGM) and four-wave mixing (FWM) is investigated, and the operation conditions of the input powers and the wavelengths are clarified for efficient XGM and FWM operation. On the basis of these conditions, all-optical XNOR operation at 10 Gbps is demonstrated with clear eye opening
The regional control of the bandgap energies using the highly stacked quantum dot (QD) on InP(311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B þ implantation and rapid thermal annealing (RTA) around 600 C, in which the ion implantation depths are controlled regionally with a combination of SiO 2 and polymer (AZ) films. Controlled blue shifts of the photoluminescence (PL) spectra verify the effectiveness of the regionally controlled QDI process for application to semiconductor photonic integrated circuits using 1550 nm-band QD such as integrated wavelength division multiplexing (WDM) light sources.
We evaluated temperature characteristics of QD-based-LDs by ion-implantation- induced-disordering quantum-dot intermixing technique with Ar and B ions, and demonstrated high temperature stability with a characteristic temperature of 284 K and a wavelength shift of 0.15 nm/°C.
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