GaAs thin-film solar cells

Physical, optical and electrical properties of copper selenide (CuSe) thin films deposited by solution growth technique at room temperature

“…Cu 2−x Se is reported to possess a direct band gap of 2.2 eV and an indirect band gap of 1.4 eV for x = 0.2 [7]. However, Vohl et al [8], Okimura et al [4], and Tadashi et al [9] has obtained only wide direct band gap of 2.0 eV. While Sharma et al [10,19] and Padam [11] has obtained a direct band gap of around 1.2 eV.…”

Synthesis, characterizations, and optical properties of copper selenide quantum dots

“…Therefore, to develop new methods for preparing high quality copper selenide nanomaterials and to achieve control of their size or shape are very necessary. Copper selenide, due to its stoichiometric variation, is reported to posses a direct band gap of 2.0-2.2 eV, as well as to an indirect band gap of 1.4 eV (Cu 2-x Se for x = 0.2) [26][27][28][29][30][31][32][33][34][35][36][37][38]. Obtaining novel nanomaterials with controllable size or shape under mild conditions and with safe precursor at lower temperature with a relatively quicker process is an issue that has engaged many researchers.…”

Recent progress in thin-film solar cells

“…These cells are especially useful for~ concentrator applications. Thin-film GaAs cells with an efficiency of 5% have been reported [18], which use either a 50/~m film and a platinum barrier contact or a 15/xm film and a CuxSe contact. A more ambitious programme seeks to replace the vapour growth on a metallized substrate by growing on a single-crystal GaAs substrate followed by peeling off the film.…”