Physical, optical and electrical properties of copper selenide (CuSe) thin films deposited by solution growth technique at room temperature

Gosavi, S. R.; Deshpande, Nishad G.; Gudage, Y.G.; Sharma, Ramphal

doi:10.1016/j.jallcom.2007.03.068

Cited by 120 publications

(74 citation statements)

References 26 publications

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“…As was the case at the GB, the Se map shows the uninterrupted continuation of the Se sub-lattice, whereas Cu and In cations are exchanged. This is 18,19 There are two main equilibrium phases for the non-stoichiometric Cu 2-x Se phase at lower Cu concentrations: a high temperature b-Cu 2-x Se phase and a low temperature a-Cu 2-x Se phase. 20 It has also been noted that for x ¼ 0.15-0.25, the high temperature phase can be present at room temperature.…”

mentioning

confidence: 99%

Evidence for Cu2–xSe platelets at grain boundaries and within grains in Cu(In,Ga)Se2 thin films

Sanli

Ramasse

Mainz

et al. 2017

Applied Physics Letters

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Cu(In,Ga)Se2 (CIGS)-based solar cells reach high power-conversion efficiencies of above 22%. In this work, a three-stage co-evaporation method was used for their fabrication. During the growth stages, the stoichiometry of the absorbers changes from Cu-poor ([Cu]/([In] + [Ga]) < 1) to Cu-rich ([Cu]/([In] + [Ga]) > 1) and finally becomes Cu-poor again when the growth process is completed. It is known that, according to the Cu-In-Ga-Se phase diagram, a Cu-rich growth leads to the presence of Cu2–xSe (x = 0–0.25), which is assumed to assist in recrystallization, grain growth, and defect annihilation in the CIGS layer. So far, Cu2–xSe precipitates with spatial extensions on the order of 10–100 nm have been detected only in Cu-rich CIGS layers. In the present work, we report Cu2–xSe platelets with widths of only a few atomic planes at grain boundaries and as inclusions within grains in a polycrystalline, Cu-poor CIGS layer, as evidenced by high-resolution scanning transmission electron microscopy (STEM). The chemistry of the Cu–Se secondary phase was analyzed by electron energy-loss spectroscopy, and STEM image simulation confirmed the identification of the detected phase. These results represent additional experimental evidence for the proposed topotactical growth model for Cu–Se–assisted CIGS thin-film formation under Cu-rich conditions.

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mentioning

confidence: 99%

Evidence for Cu2–xSe platelets at grain boundaries and within grains in Cu(In,Ga)Se2 thin films

Sanli

Ramasse

Mainz

et al. 2017

Applied Physics Letters

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“…DTM -101 provided by Hind-Hi Vac. Further confirmation of thickness was estimated by Tolansky's method [9] using multiple beam Fizeau fringes. The deposition rate was maintained 10 -20 Å/sec throughout sample preparation.…”

Section: Synthesis and Characterization Of Samplementioning

confidence: 99%

“…Using these values, charge carrier concentration was estimated as n = 1.3063 x 10 18 /cm 3 [13], and mobility was found μ = 1.5394 x 10 4 cm 2 /V-s (Table 1). The measurement of temperature dependence of electrical resistivity showed that CuInSe films always have positive temperature coefficients [9]. The plots of log  as a function of reciprocal of absolute temperature (1/T) are represented in Fig 17. The electrical conductivity varies linearly with temperature.…”

Section: Electrical and Thermo Electrical Properties Of Cuinse Films mentioning

confidence: 99%

Structural and Electrical properties of Thermally Evaporated Nanostructured CuInSe Thin Films

Jain¹,

Toda²,

Gujarathi³

2017

IOSR JAP

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“…A wide range of copper selenide stoichiometric (Cu 2 Se, Cu 3 Se 2 , CuSe 2 , CuSe) and nonstoichiometric (Cu 2−x Se) compositions and their crystallographic forms have been synthesized and characterized during several decades [4,5]. The band gap of copper selenide is not well defined because of the wide variety of stoichiometric forms, presence of high density of dislocations and defects, energy barrier height variations in grains of polycrystalline films, and quantum confinement effects [6]. Cu 2−x Se is usually reported to possess a direct band gap of 2.21-2.39 eV and an indirect band gap of 1.2-1.7 eV [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Transient absorption of copper selenide nanowires of different stoichiometry

Juška¹,

Gulbinas²,

Jagminas³

2010

Lithuanian J. Phys.

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Copper selenide nanowires of different stoichiometric compositions and having different density of defects that form intraband states embedded in a porous alumina layer have been investigated by means of a femtosecond absorption pump-probe technique. Depending on the formation conditions, different samples have different absorption spectra in the near-infrared spectral range, but all of them show bleaching of the most intense absorption bands, which competes with the induced absorption of free charge carriers. A transient absorption relaxation takes place in two steps, with time constants of about 1 ps and several tens of ps. Relative contribution of the fast relaxation component increases in samples with the higher density of defect states forming the recombination centres.

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Physical, optical and electrical properties of copper selenide (CuSe) thin films deposited by solution growth technique at room temperature

Cited by 120 publications

References 26 publications

Evidence for Cu2–xSe platelets at grain boundaries and within grains in Cu(In,Ga)Se2 thin films

Evidence for Cu2–xSe platelets at grain boundaries and within grains in Cu(In,Ga)Se2 thin films

Structural and Electrical properties of Thermally Evaporated Nanostructured CuInSe Thin Films

Transient absorption of copper selenide nanowires of different stoichiometry

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