GAAS Solar Cells on Si Wafers for Space Application

Flores, C.; Gabetta, G.; Casale, Mariacristina; Campesato, R.; Smekens, G.; Vanbegin, J.

doi:10.1109/wcpec.2006.279841

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…Our previous work has investigated the impact of the electron beam on β-Ga 2 O 3 , and the results indicated that electron irradiation excites electron-hole pairs in β-Ga 2 O 3 and increases traps in β-Ga 2 O 3 . 12 Then, temperature-dependent experiments were conducted on β-Ga 2 O 3 photodetectors. The typical temperature points were selected at 40 K, 100 K, 160 K, 220 K, 280 K, and 300 K. The voltammetry curves and photo response curves of β-Ga 2 O 3 photodetectors were measured by Keithley 4200 at different temperature points.…”

Section: Methodsmentioning

confidence: 99%

“…At a low temperature, the mobility is limited by ionized impurity scattering. 10,11 In deepspace environments, temperatures can decrease as low as 133 K on Mars 12 and as low as 53 K on Jupiter. 13 In this letter, a β-Ga 2 O 3 photodetector was prepared, and the structure, electrical, and photoelectric properties were characterized to study the effects of temperature on the photodetector of β-Ga 2 O 3 at a temperature of 40-300 K.…”

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confidence: 99%

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Temperature-Dependent Study of β-Ga₂O₃ Solar-Blind Photodetectors

Wang¹,

Wang²,

Li³

et al. 2022

ECS J. Solid State Sci. Technol.

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In this paper, the electrical and ultraviolet optoelectronic properties of the interdigitated finger geometry β-Ga2O3 photodetector were investigated from the temperature of 40 K to 300 K. Under different light illumination conditions, when the temperature increased from 40 K to 300 K, the maximum current of the β-Ga2O3 photodetector was obtained around 180 K, which is related to the carrier mobility of β-Ga2O3. Under 365-nm illumination, when the temperature increased from 40 K to 300 K, the photo-to-dark current ratio (PDCR) of the β-Ga2O3 photodetector increased by 924%. Under 254-nm illumination, the PDCR decreased by 87%. Besides, the temperature point corresponding to the photoresponse peak under 365-nm illumination moved to the right under 254-nm illumination, indicating that the photodetector had a redshift at low temperature. Moreover, the fast photoresponse time under 365-nm and 254-nm illumination decreased when the temperature increased. This indicated that the defect concentration of Ga2O3 decreased gradually as the temperature increased, leading to the faster response time of the photodetector.

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Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%